@article{597679d012554f8c942949985489ec45,
title = "Novel a-Si:H amoled pixel circuit to ameliorate oled luminance degradation by external detection",
abstract = "This letter presents a novel hydrogenated amorphous silicon (a-Si:H) active-matrix organic light-emitting diode (OLED) pixel circuit that compensates for the threshold voltage shift of TFT using an internal compensated structure and reduces luminance decay by external detection method, based on the interdependence between the luminance degradation of OLED and the decrease in current under constant voltage bias stress. Experimental results demonstrate that the luminance of the OLED device with the proposed external detection method is more stable than that with the conventional 2T1C pixel circuit.",
author = "Lin, {Chih Lung} and Hung, {Chia Che} and Chang, {Wen Yen} and Chou, {Kuan Wen} and Chuang, {Cheng Yan}",
note = "Funding Information: Manuscript received July 19, 2011; revised August 26, 2011; accepted August 27, 2011. Date of publication October 13, 2011; date of current version November 23, 2011. This work was supported by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education and the National Science Council (NSC 100-2221-E-006-046) of Taiwan. The review of this letter was arranged by Editor P. K.-L. Yu.",
year = "2011",
month = dec,
doi = "10.1109/LED.2011.2167592",
language = "English",
volume = "32",
pages = "1716--1718",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}