Novel a-Si:H Gate Driver Circuit with High Charging and Discharging Speeds for Use in High-resolution Liquid-Crystal Displays

Wen Ching Chiu, Chih Cheng Hsu, Po Chun Lai, Ming Xun Wang, Chih Lung Lin

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

This work proposes a novel gate driver circuit based on hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) technologies. Since the gate voltage of the driving TFT is increased by the proposed pre-bootstrapping structure for enhancing its driving capability, the issue of low mobility of a-Si:H TFT is improved. Thus, the high charging and discharging speeds of the output node are certified. Simulation results show that the voltage levels at the gate node of the driving TFT are increased to 21.49 V and43.03 V before the output waveform starts to rise and fall, ensuring that the proposed circuit can fast charge and discharge the output node through the driving TFT.

原文English
主出版物標題AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices
主出版物子標題TFT Technologies and FPD Materials, Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(列印)9784990875350
DOIs
出版狀態Published - 2018 八月 15
事件25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018 - Kyoto, Japan
持續時間: 2018 七月 32018 七月 6

出版系列

名字AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Other

Other25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018
國家/地區Japan
城市Kyoto
期間18-07-0318-07-06

All Science Journal Classification (ASJC) codes

  • 媒體技術
  • 電子、光磁材料
  • 原子與分子物理與光學

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