TY - GEN
T1 - Novel a-Si:H Gate Driver Circuit with High Charging and Discharging Speeds for Use in High-resolution Liquid-Crystal Displays
AU - Chiu, Wen Ching
AU - Hsu, Chih Cheng
AU - Lai, Po Chun
AU - Wang, Ming Xun
AU - Lin, Chih Lung
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology of Taiwan under Projects of MOST 106-2622-E-006-011-CC2 and MOST 106-2218-E-006-024, as well as AU Optronics Corporation is appreciated for its technical and funding support.
Publisher Copyright:
© 2018 FTFMD.
PY - 2018/8/15
Y1 - 2018/8/15
N2 - This work proposes a novel gate driver circuit based on hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) technologies. Since the gate voltage of the driving TFT is increased by the proposed pre-bootstrapping structure for enhancing its driving capability, the issue of low mobility of a-Si:H TFT is improved. Thus, the high charging and discharging speeds of the output node are certified. Simulation results show that the voltage levels at the gate node of the driving TFT are increased to 21.49 V and43.03 V before the output waveform starts to rise and fall, ensuring that the proposed circuit can fast charge and discharge the output node through the driving TFT.
AB - This work proposes a novel gate driver circuit based on hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) technologies. Since the gate voltage of the driving TFT is increased by the proposed pre-bootstrapping structure for enhancing its driving capability, the issue of low mobility of a-Si:H TFT is improved. Thus, the high charging and discharging speeds of the output node are certified. Simulation results show that the voltage levels at the gate node of the driving TFT are increased to 21.49 V and43.03 V before the output waveform starts to rise and fall, ensuring that the proposed circuit can fast charge and discharge the output node through the driving TFT.
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U2 - 10.23919/AM-FPD.2018.8437402
DO - 10.23919/AM-FPD.2018.8437402
M3 - Conference contribution
AN - SCOPUS:85053115475
SN - 9784990875350
T3 - AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings
BT - AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018
Y2 - 3 July 2018 through 6 July 2018
ER -