Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

Yan Kuin Su; Jia Rong Chang; Yan-Ten Lu; Chuing Liang Lin; Kuo Ming Wu; Zheng Xian Wu

doi:10.1109/55.830963

Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

Yan Kuin Su
, Jia Rong Chang
, Yan-Ten Lu
, Chuing Liang Lin
, Kuo Ming Wu
, Zheng Xian Wu

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

摘要

We demonstrate a novel Al_0.66In_0.34As_0.85Sb_0.15/In_0.53Ga_0.47As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy. A high peak-to-valley current ratio of 46 and a peak current density of 22 kA/cm² were obtained at room temperature.

原文	English
頁（從 - 到）	146-148
頁數	3
期刊	IEEE Electron Device Letters
卷	21
發行號	4
DOIs	https://doi.org/10.1109/55.830963
出版狀態	Published - 2000 4月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/55.830963

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abstract = "We demonstrate a novel Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy. A high peak-to-valley current ratio of 46 and a peak current density of 22 kA/cm2 were obtained at room temperature.",

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AU - Su, Yan Kuin

AU - Chang, Jia Rong

AU - Lu, Yan-Ten

AU - Lin, Chuing Liang

AU - Wu, Kuo Ming

AU - Wu, Zheng Xian

PY - 2000/4

Y1 - 2000/4

N2 - We demonstrate a novel Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy. A high peak-to-valley current ratio of 46 and a peak current density of 22 kA/cm2 were obtained at room temperature.

AB - We demonstrate a novel Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy. A high peak-to-valley current ratio of 46 and a peak current density of 22 kA/cm2 were obtained at room temperature.

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AN - SCOPUS:0033905362

SN - 0741-3106

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

摘要

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