Novel Cu/Cr/Ge/Pd ohmic contacts on highly doped n-GaAs

Kartika Chandra Sahoo, Chun Wei Chang, Yuen Yee Wong, Tung Ling Hsieh, Edward Yi Chang, Ching Ting Lee

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

The thermal stability of the Cu/Cr/Ge/Pd/n +-GaAs contact structure was evaluated. In this structure, a thin 40 nm layer of chromium was deposited as a diffusion barrier to block copper diffusion into GaAs. After thermal annealing at 350°C, the specific contact resistance of the copper-based ohmic contact Cu/Cr/Ge/Pd was measured to be (5.1 ± 0.6) × 10 -7 Ω cm 2. Diffusion behaviors of these films at different annealing temperatures were characterized by metal sheet resistance, X-ray diffraction data, Auger electron spectroscopy, and transmission electron microscopy. The Cu/Cr/Ge/Pd contact structure was very stable after 350°C annealing. However, after 400°C annealing, the reaction of copper with the underlying layers started to occur and formed Cu 3Ga, Cu 3As, Cu 9Ga 4, and Ge 3Cu phases due to interfacial instability and copper diffusion.

原文English
頁(從 - 到)901-904
頁數4
期刊Journal of Electronic Materials
37
發行號6
DOIs
出版狀態Published - 2008 6月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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