NOVEL DEVICES BY Si-BASED MOLECULAR BEAM EPITAXY.

研究成果: Article

11 引文 斯高帕斯(Scopus)

摘要

Silicon Molecular Beam Epitaxy (MBE) is becoming a viable technique for growing epitaxial Si-based films. Using MBE, unique features can be incorporated in epitaxial growth and problems often encountered in conventional growth technology may be alleviated. Incorporating these features, the growth of several types of superlattices for device application in Si-based materials has been successfully demonstrated. Recent progress in growing abruptly doped Si, uniform CoSi//2/Si, and Ge//xSi//1// minus //x/Si films, as well as in fabricating devices using these materials, is described. In particular, problems and solutions for growing device quality Si-based films by MBE are contrasted with those of III-V compounds. Examples ranging from the improvement of conventional devices to the development of new high speed and high frequency devices are discussed.

原文English
頁面137-143
頁數7
28
10
專業出版物Solid State Technology
出版狀態Published - 1985 十月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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