Novel FD SOI devices structure for low standby power applications

Ming Wen Ma, Tien Sheng Chao, Kuo-Hsing Kao, Jyun Siang Huang, Tan Fu Lei

研究成果: Paper

摘要

In this paper, full-depleted SOI devices with source/drain extension shift and high-K offset spacer were investigated in detail. The calculated results show that the source/drain extension shift can decrease off-state leakage current Ioff significantly by utilizing the extra electron barrier height in source/drain extension shift region to reduce standby power dissipation. However, the on-state driving current Ion is also sacrificing simultaneously. In order to overcome this drawback, the high-κ offset spacer is used to increase the on-state driving current Ion effectively due to the enhanced vertical fringing electric field to elevate the channel voltage drop and reduce series resistance. Consequently, a nanoscale FD SOI device with 8-nm S/D extension shift and TiO2 offset spacer can possess high driving current Ion and ultra-low leakage current I off about 0.003 times lower than conventional SOI structure.

原文English
頁面59-62
頁數4
出版狀態Published - 2006 十二月 12
事件2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA, United States
持續時間: 2006 五月 72006 五月 11

Other

Other2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
國家United States
城市Boston, MA
期間06-05-0706-05-11

指紋

Leakage currents
Ions
Energy dissipation
Electric fields
Electrons
Voltage drop

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此文

Ma, M. W., Chao, T. S., Kao, K-H., Huang, J. S., & Lei, T. F. (2006). Novel FD SOI devices structure for low standby power applications. 59-62. 論文發表於 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings, Boston, MA, United States.
Ma, Ming Wen ; Chao, Tien Sheng ; Kao, Kuo-Hsing ; Huang, Jyun Siang ; Lei, Tan Fu. / Novel FD SOI devices structure for low standby power applications. 論文發表於 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings, Boston, MA, United States.4 p.
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abstract = "In this paper, full-depleted SOI devices with source/drain extension shift and high-K offset spacer were investigated in detail. The calculated results show that the source/drain extension shift can decrease off-state leakage current Ioff significantly by utilizing the extra electron barrier height in source/drain extension shift region to reduce standby power dissipation. However, the on-state driving current Ion is also sacrificing simultaneously. In order to overcome this drawback, the high-κ offset spacer is used to increase the on-state driving current Ion effectively due to the enhanced vertical fringing electric field to elevate the channel voltage drop and reduce series resistance. Consequently, a nanoscale FD SOI device with 8-nm S/D extension shift and TiO2 offset spacer can possess high driving current Ion and ultra-low leakage current I off about 0.003 times lower than conventional SOI structure.",
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Ma, MW, Chao, TS, Kao, K-H, Huang, JS & Lei, TF 2006, 'Novel FD SOI devices structure for low standby power applications', 論文發表於 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings, Boston, MA, United States, 06-05-07 - 06-05-11 頁 59-62.

Novel FD SOI devices structure for low standby power applications. / Ma, Ming Wen; Chao, Tien Sheng; Kao, Kuo-Hsing; Huang, Jyun Siang; Lei, Tan Fu.

2006. 59-62 論文發表於 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings, Boston, MA, United States.

研究成果: Paper

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AB - In this paper, full-depleted SOI devices with source/drain extension shift and high-K offset spacer were investigated in detail. The calculated results show that the source/drain extension shift can decrease off-state leakage current Ioff significantly by utilizing the extra electron barrier height in source/drain extension shift region to reduce standby power dissipation. However, the on-state driving current Ion is also sacrificing simultaneously. In order to overcome this drawback, the high-κ offset spacer is used to increase the on-state driving current Ion effectively due to the enhanced vertical fringing electric field to elevate the channel voltage drop and reduce series resistance. Consequently, a nanoscale FD SOI device with 8-nm S/D extension shift and TiO2 offset spacer can possess high driving current Ion and ultra-low leakage current I off about 0.003 times lower than conventional SOI structure.

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Ma MW, Chao TS, Kao K-H, Huang JS, Lei TF. Novel FD SOI devices structure for low standby power applications. 2006. 論文發表於 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings, Boston, MA, United States.