A three-terminal n+-i-δp+-i-n+ bipolar-unipolar transition transistor has been successfully fabricated by molecular beam epitaxy. Due to the combination of the two transitions, they make a genuine N-shaped current-voltage characteristic. It is a voltage-controlled device with a variable peak-to-valley current ratio which is adjustable by a bias applied to the third terminal (base). A hypothetical model is proposed and confirmed by experiments.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)