Novel GaAs voltage-controllable negative differential resistance transistor prepared by molecular beam epitaxy

K. F. Yarn, Y. H. Wang, C. Y. Chang

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

A three-terminal n+-i-δp+-i-n+ bipolar-unipolar transition transistor has been successfully fabricated by molecular beam epitaxy. Due to the combination of the two transitions, they make a genuine N-shaped current-voltage characteristic. It is a voltage-controlled device with a variable peak-to-valley current ratio which is adjustable by a bias applied to the third terminal (base). A hypothetical model is proposed and confirmed by experiments.

原文English
頁(從 - 到)1157-1159
頁數3
期刊Applied Physics Letters
54
發行號12
DOIs
出版狀態Published - 1989 十二月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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