Novel GaAs voltage-controllable negative differential resistance transistor prepared by molecular beam epitaxy

K. F. Yarn; Y. H. Wang; C. Y. Chang

doi:10.1063/1.100747

Novel GaAs voltage-controllable negative differential resistance transistor prepared by molecular beam epitaxy

K. F. Yarn, Y. H. Wang, C. Y. Chang

研究成果: Article › 同行評審

12 引文斯高帕斯（Scopus）

摘要

A three-terminal n⁺-i-δp⁺-i-n⁺ bipolar-unipolar transition transistor has been successfully fabricated by molecular beam epitaxy. Due to the combination of the two transitions, they make a genuine N-shaped current-voltage characteristic. It is a voltage-controlled device with a variable peak-to-valley current ratio which is adjustable by a bias applied to the third terminal (base). A hypothetical model is proposed and confirmed by experiments.

原文	English
頁（從 - 到）	1157-1159
頁數	3
期刊	Applied Physics Letters
卷	54
發行號	12
DOIs	https://doi.org/10.1063/1.100747
出版狀態	Published - 1989 十二月 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.100747

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引用此

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