Novel high-brightness tunneling-regenerated multi-active-region AlGaInP light-emitting diode

Xia Guo, Guangdi Shen, Guohong Wang, Xuezhong Wang, Jinyu Du, Guo Gao, Kang L. Wang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In order to resolve the prevailing problems in conventional light-emitting diodes (LEDs), novel high-efficiency tunneling-regenerated multi-active-region (TRMAR) LEDs are proposed, which have such advantages as low heat generation, carrier overflow level and non-radiation recombination rate and whose quantum efficiency and the output optical power can be scaled with the number of the active regions. Experiments show that the on-axis luminous intensity of TRMAR LEDs increases linearly with the number of active regions. The novel LEDs have high quantum efficiency under low current injection and their maximum on-axis luminous intensity exceeds 5 candelas at 20 mA current injection at the peak wavelength of 625 nm with a 15° angle cap.

原文English
期刊Science in China, Series E: Technological Sciences
46
發行號2
DOIs
出版狀態Published - 2003 四月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 工程 (全部)

指紋

深入研究「Novel high-brightness tunneling-regenerated multi-active-region AlGaInP light-emitting diode」主題。共同形成了獨特的指紋。

引用此