Novel high speed, high density SRAM cell utilizing a bistable GeSi/Si tunnel diode

T. K. Carns, X. Zheng, K. L. Wang

研究成果: Conference article同行評審

摘要

A three element SRAM cell consisting of a gate transistor, a load device and a bistable GeSi/Si quantum well tunnel diode as the storage element is proposed and demonstrated with a test structure. Being composed of a couple of closely-spaced n-type and p-type δ-doped layers and a GeSi/Si superlattice, the quantum diode has a unique bistable characteristic and features of high density and high speed. The new SRAM cell is expected to have both the advantages of high speed of SRAM's and high density of DRAM's.

原文English
頁(從 - 到)381-384
頁數4
期刊Technical Digest - International Electron Devices Meeting
出版狀態Published - 1994
事件Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
持續時間: 1994 十二月 111994 十二月 14

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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