A three element SRAM cell consisting of a gate transistor, a load device and a bistable GeSi/Si quantum well tunnel diode as the storage element is proposed and demonstrated with a test structure. Being composed of a couple of closely-spaced n-type and p-type δ-doped layers and a GeSi/Si superlattice, the quantum diode has a unique bistable characteristic and features of high density and high speed. The new SRAM cell is expected to have both the advantages of high speed of SRAM's and high density of DRAM's.
|頁（從 - 到）||381-384|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1994|
|事件||Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
持續時間: 1994 十二月 11 → 1994 十二月 14
All Science Journal Classification (ASJC) codes