Novel high speed, high density SRAM cell utilizing a bistable GeSi/Si tunnel diode

T. K. Carns; X. Zheng; K. L. Wang

Novel high speed, high density SRAM cell utilizing a bistable GeSi/Si tunnel diode

T. K. Carns
, X. Zheng
, K. L. Wang

電機資訊學院

研究成果: Conference article › 同行評審

摘要

A three element SRAM cell consisting of a gate transistor, a load device and a bistable GeSi/Si quantum well tunnel diode as the storage element is proposed and demonstrated with a test structure. Being composed of a couple of closely-spaced n-type and p-type δ-doped layers and a GeSi/Si superlattice, the quantum diode has a unique bistable characteristic and features of high density and high speed. The new SRAM cell is expected to have both the advantages of high speed of SRAM's and high density of DRAM's.

原文	English
頁（從 - 到）	381-384
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
出版狀態	Published - 1994
事件	Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA 持續時間: 1994 12月 11 → 1994 12月 14

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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引用此

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title = "Novel high speed, high density SRAM cell utilizing a bistable GeSi/Si tunnel diode",

abstract = "A three element SRAM cell consisting of a gate transistor, a load device and a bistable GeSi/Si quantum well tunnel diode as the storage element is proposed and demonstrated with a test structure. Being composed of a couple of closely-spaced n-type and p-type δ-doped layers and a GeSi/Si superlattice, the quantum diode has a unique bistable characteristic and features of high density and high speed. The new SRAM cell is expected to have both the advantages of high speed of SRAM's and high density of DRAM's.",

author = "Carns, \{T. K.\} and X. Zheng and Wang, \{K. L.\}",

year = "1994",

language = "English",

pages = "381--384",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Novel high speed, high density SRAM cell utilizing a bistable GeSi/Si tunnel diode

AU - Carns, T. K.

AU - Zheng, X.

AU - Wang, K. L.

PY - 1994

Y1 - 1994

N2 - A three element SRAM cell consisting of a gate transistor, a load device and a bistable GeSi/Si quantum well tunnel diode as the storage element is proposed and demonstrated with a test structure. Being composed of a couple of closely-spaced n-type and p-type δ-doped layers and a GeSi/Si superlattice, the quantum diode has a unique bistable characteristic and features of high density and high speed. The new SRAM cell is expected to have both the advantages of high speed of SRAM's and high density of DRAM's.

AB - A three element SRAM cell consisting of a gate transistor, a load device and a bistable GeSi/Si quantum well tunnel diode as the storage element is proposed and demonstrated with a test structure. Being composed of a couple of closely-spaced n-type and p-type δ-doped layers and a GeSi/Si superlattice, the quantum diode has a unique bistable characteristic and features of high density and high speed. The new SRAM cell is expected to have both the advantages of high speed of SRAM's and high density of DRAM's.

UR - https://www.scopus.com/pages/publications/0028738030

UR - https://www.scopus.com/pages/publications/0028738030#tab=citedBy

M3 - Conference article

AN - SCOPUS:0028738030

SN - 0163-1918

SP - 381

EP - 384

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1994 IEEE International Electron Devices Meeting

Y2 - 11 December 1994 through 14 December 1994

ER -

Novel high speed, high density SRAM cell utilizing a bistable GeSi/Si tunnel diode

摘要

All Science Journal Classification (ASJC) codes

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