Novel high speed, high density SRAM cell utilizing a bistable GeSi/Si tunnel diode

T. K. Carns, X. Zheng, K. L. Wang

研究成果: Conference article同行評審

指紋

深入研究「Novel high speed, high density SRAM cell utilizing a bistable GeSi/Si tunnel diode」主題。共同形成了獨特的指紋。

Physics & Astronomy

Engineering & Materials Science

Chemical Compounds