TY - JOUR
T1 - Novel oxide-passivated AlGaN/GaN HEMT by using hydrogen peroxide treatment
AU - Liu, Han Yin
AU - Chou, Bo Yi
AU - Hsu, Wei Chou
AU - Lee, Ching Sung
AU - Ho, Chiu Sheng
N1 - Funding Information:
Manuscript received June 22, 2011; revised August 12, 2011 and August 26, 2011; accepted August 30, 2011. Date of publication October 6, 2011; date of current version November 23, 2011. This work was supported in part by the National Science Council, under Contract NSC 100-3113-E-006-015, Contract NSC 100-2221-E-006-039-MY3, and Contract NSC 100-2221-E-035-018 and in part by the Bureau of Energy, Ministry of Economic Affairs, under Contract 100-D0204-6. The review of this brief was arranged by Editor A. Haque.
PY - 2011/12
Y1 - 2011/12
N2 - This brief reports, for the first time, an oxide-passivated AlGaN/GaN high electron mobility transistor by using the hydrogen peroxide (H2O 2) treatment. Characterizations by using electron spectroscopy for chemical analysis and transmission electron microscopy have been performed to verify the formation of surface oxide on the AlGaN barrier layer. The present design has demonstrated superior improvements of 41% in the maximum drain/source current density IDS, max, 39% in the drain/source saturation current density at zero gate bias IDSS0, 47% in the maximum extrinsic transconductance gm, max, 53.2% in the two-terminal gate/drain breakdown voltage BVGD, 36% in the cutoff frequency fT, and 20% in the maximum oscillation frequency f\max, as compared with an unpassivated conventional device.
AB - This brief reports, for the first time, an oxide-passivated AlGaN/GaN high electron mobility transistor by using the hydrogen peroxide (H2O 2) treatment. Characterizations by using electron spectroscopy for chemical analysis and transmission electron microscopy have been performed to verify the formation of surface oxide on the AlGaN barrier layer. The present design has demonstrated superior improvements of 41% in the maximum drain/source current density IDS, max, 39% in the drain/source saturation current density at zero gate bias IDSS0, 47% in the maximum extrinsic transconductance gm, max, 53.2% in the two-terminal gate/drain breakdown voltage BVGD, 36% in the cutoff frequency fT, and 20% in the maximum oscillation frequency f\max, as compared with an unpassivated conventional device.
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U2 - 10.1109/TED.2011.2167512
DO - 10.1109/TED.2011.2167512
M3 - Article
AN - SCOPUS:82155162452
SN - 0018-9383
VL - 58
SP - 4430
EP - 4433
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 12
M1 - 6035767
ER -