TY - GEN
T1 - Novel package technology of ultra high power light-emitting diodes by electroplating
AU - Su, Y. K.
AU - Chen, K. C.
AU - Lin, C. L.
AU - Chuang, Ricky W.
AU - Huang, J. Q.
AU - Hsiao, Chiu Hsu
PY - 2007
Y1 - 2007
N2 - Thermal management of devices package is now a critical problem for applications of high power light emitting diodes (LEDs). In this paper coppers were first electroplated on the novel package red, green, and blue LED chips directly. With the copper plating layer, the endurable injection current of these LED chips can be increased easily from conventional 350 mA to more than 1680 mA in room temperature; especially the input power of the GaN-based single chip blue LED can be increased to 12W. The relative luminous intensity at 350 mA of the novel red, green, and blue LEDs (RGB LEDs) have 53%, 69%, and 23% enhancement respectively compared with those of the conventional packaged LEDs. When the injection current of these LED chips were increased to 850mA , the relative luminous intensity of the novel RGB LEDs chips have 431% and 83%, and 18% enhancement respectively compared with those of the conventional packaged ones.
AB - Thermal management of devices package is now a critical problem for applications of high power light emitting diodes (LEDs). In this paper coppers were first electroplated on the novel package red, green, and blue LED chips directly. With the copper plating layer, the endurable injection current of these LED chips can be increased easily from conventional 350 mA to more than 1680 mA in room temperature; especially the input power of the GaN-based single chip blue LED can be increased to 12W. The relative luminous intensity at 350 mA of the novel red, green, and blue LEDs (RGB LEDs) have 53%, 69%, and 23% enhancement respectively compared with those of the conventional packaged LEDs. When the injection current of these LED chips were increased to 850mA , the relative luminous intensity of the novel RGB LEDs chips have 431% and 83%, and 18% enhancement respectively compared with those of the conventional packaged ones.
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U2 - 10.1109/CSICS07.2007.9
DO - 10.1109/CSICS07.2007.9
M3 - Conference contribution
AN - SCOPUS:47349090055
SN - 1424410223
SN - 9781424410224
T3 - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
SP - 24
EP - 27
BT - 29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium
T2 - 29th Annual IEEE Compound Semiconductor Integrated Circuit Symposium 2007 IEEE CSIC Symposium: "Tastes of the Northwest"
Y2 - 14 October 2007 through 17 October 2007
ER -