摘要
We investigated the impacts of novel surfactants on oxide chemical mechanical polishing (CMP) performance. Silica-based potassium hydroxide was formulated for this study. Two polymeric surfactants, methyl methacrylate (MMA)-based CHE and silixane-based SHE, were added to the slurry for evaluation. Particle size, viscosity, surface tension, and contact angle of slurries were characterized. Without surfactant, the silica-based slurry withstood up to 8.5 wt% of solid loading before the silica abrasives segregate and settle. With the addition of surfactant, however, the slurry held up to 15 wt% of solids without segregation. The CHE-added slurry yielded higher viscosity and higher oxide CMP removal rate than SHE-added slurry, while the latter exhibited better colloidal dispersion characteristics and lower within-wafer nonuniformity.
原文 | English |
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頁(從 - 到) | G42-G45 |
期刊 | Electrochemical and Solid-State Letters |
卷 | 4 |
發行號 | 5 |
DOIs | |
出版狀態 | Published - 2001 5月 |
All Science Journal Classification (ASJC) codes
- 化學工程 (全部)
- 材料科學(全部)
- 物理與理論化學
- 電化學
- 電氣與電子工程