Novel polymeric surfactants for improving chemical mechanical polishing performance of silicon oxide

Wei Tsu Tseng, Ping Lin Kuo, Chin Lung Liao, Rick Lu, Jen Fin Lin

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

We investigated the impacts of novel surfactants on oxide chemical mechanical polishing (CMP) performance. Silica-based potassium hydroxide was formulated for this study. Two polymeric surfactants, methyl methacrylate (MMA)-based CHE and silixane-based SHE, were added to the slurry for evaluation. Particle size, viscosity, surface tension, and contact angle of slurries were characterized. Without surfactant, the silica-based slurry withstood up to 8.5 wt% of solid loading before the silica abrasives segregate and settle. With the addition of surfactant, however, the slurry held up to 15 wt% of solids without segregation. The CHE-added slurry yielded higher viscosity and higher oxide CMP removal rate than SHE-added slurry, while the latter exhibited better colloidal dispersion characteristics and lower within-wafer nonuniformity.

原文English
頁(從 - 到)G42-G45
期刊Electrochemical and Solid-State Letters
4
發行號5
DOIs
出版狀態Published - 2001 5月

All Science Journal Classification (ASJC) codes

  • 化學工程 (全部)
  • 材料科學(全部)
  • 物理與理論化學
  • 電化學
  • 電氣與電子工程

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