摘要
In this work, we have thoroughly studied the effects of flux composition and temperature on the crystal growth of the BaCu2As2 compound. While Pb and CuAs self-flux produce the well-known α-phase ThCr2Si2-type structure (Z = 2), a new polymorphic phase of BaCu2As2 (β-phase) with a much larger c lattice parameter (Z = 10), which could be considered an intergrowth of the ThCr2Si2- and CaBe2Ge2-type structures, has been discovered via Sn flux growth. We have characterized this structure through single-crystal X-ray diffraction, transmission electron microscopy (TEM), and scanning transmission electron microscopy (STEM) studies. Furthermore, we compare this new polymorphic intergrowth structure with the α-phase BaCu2As2 (ThCr2Si2 type with Z = 2) and the β-phase BaCu2Sb2 (intergrowth of ThCr2Si2 and CaBe2Ge2 types with Z = 6), both with the same space group I4/mmm. Electrical transport studies reveal p-type carriers and magnetoresistivity up to 22% at 5 K and under a magnetic field of 7 T. Our work suggests a new route for the discovery of new polymorphic structures through flux and temperature control during material synthesis.
| 原文 | English |
|---|---|
| 頁(從 - 到) | 5922-5930 |
| 頁數 | 9 |
| 期刊 | Crystal Growth and Design |
| 卷 | 20 |
| 發行號 | 9 |
| DOIs | |
| 出版狀態 | Published - 2020 9月 2 |
All Science Journal Classification (ASJC) codes
- 一般化學
- 一般材料科學
- 凝聚態物理學
指紋
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