TY - GEN
T1 - Novel top-down Cu filling of through silicon via (TSV) in 3-D integration
AU - Weng, Ting Chia
AU - Lu, Jun Liang
AU - Chang, Shoou Jinn
AU - Hsueh, Ting Jen
N1 - Funding Information:
Ministry of Science and Technology, Taiwan (104GE05, 103-2221-E-492-047-MY3); National Nano Devices Laboratories, Tainan, Taiwan, Republic of China, Taiwan.
Publisher Copyright:
© 2016 IEEE.
PY - 2016/7/8
Y1 - 2016/7/8
N2 - A novel Cu through silicon via (TSV) fabrication process without chemical mechanical polishing, temporary bonding, and de-bonding processes was presented. The study uses the new process to successfully manufacture the flat copper and copper pillar on the two sides respectively. Cu uniformly filled in each TSV, whose average resistance was about 0.55 mΩ. The resistance characteristic of the copper matches the theory value.
AB - A novel Cu through silicon via (TSV) fabrication process without chemical mechanical polishing, temporary bonding, and de-bonding processes was presented. The study uses the new process to successfully manufacture the flat copper and copper pillar on the two sides respectively. Cu uniformly filled in each TSV, whose average resistance was about 0.55 mΩ. The resistance characteristic of the copper matches the theory value.
UR - http://www.scopus.com/inward/record.url?scp=84981313740&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84981313740&partnerID=8YFLogxK
U2 - 10.1109/IITC-AMC.2016.7507705
DO - 10.1109/IITC-AMC.2016.7507705
M3 - Conference contribution
AN - SCOPUS:84981313740
T3 - 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
SP - 125
EP - 126
BT - 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
Y2 - 23 May 2016 through 26 May 2016
ER -