Numerical and experimental analsis of an InP/InGaAs tunneling emitter bipolar transistor (TEBT) for low-voltage and low-power circuit applications

Shiou Ying Cheng, Chun Yuan Chen, Jing Yuh Chen, Hung Ming Chuang, Wen-Chau Liu, Wen Lung Chang

研究成果: Conference contribution

摘要

An InP/InGaAs tunneling emitter bipolar transistor (TEBT) for low-voltage and low-power circuit applications are comprehensively studied and demonstrated. Based on the detailed numerical tools, the insights into carrier transport of TEBT are investigated. Due to the employment of an appropriate tunneling emitter barrier, holes are confined effectively. So, the emitter injection efficiency is remarkably enhanced. Experimentally, the studied HBT with a thin tunneling barrier structure shows a very small offset voltage of 40mV and an extremely wide collector current operation regime. The low offset voltage is effective to improve amplifier efficiency at low power supply voltages. Furthermore, the operation region is larger than 11 decades in magnitude of collector current (10-12 to 10-1 A). A current gain of 3 is obtained even the device is operated at an ultra-low collector current of 3.9×10-12A (1.56×10-7A/cm2). This is certainly suitable for low-voltage and low-power circuit applications.

原文English
主出版物標題IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings
頁面287-288
頁數2
出版狀態Published - 2004 十二月 1
事件IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings - Beijing, China
持續時間: 2004 九月 62004 九月 10

出版系列

名字IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings

Other

OtherIVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings
國家China
城市Beijing
期間04-09-0604-09-10

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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