Numerical simulation and experimental realization of δ-doped single barrier resonant tunneling diodes

Jia Chuan Lin, Shui Jinn Wang, Wan Rone Liou, Ying Che Luo, Ching Yuan Cheng

研究成果: Article同行評審

摘要

In this study, a new negative differential resistance (NDR) device based on a δ-doped single barrier resonant tunneling structure is presented. Numerical simulation is utilized to analyze the resonant tunneling mechanism of the proposed device. Calculated results reveal that the N-shaped NDR is due to the resonant tunneling through a quasibound state inside the V-shaped quantum well generated by the 6-doped layer. The peak doping concentration of the δ-doped layer in the barrier region plays a crucial role in determining both the onset and the peak-to-valley current ratio (PVCR) of the NDR. Preliminary experimental results based on the InGaAs/InP system grown by metalorganic chemical vapor deposition are reported for the first time. With a peak concentration of around 5 × 1018 cm-3 in the δ-doped layer, a strong NDR with a PVCR of about 1.11 at room temperature has been observed.

原文English
頁(從 - 到)568-573
頁數6
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
35
發行號2 PART A
DOIs
出版狀態Published - 1996 二月

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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