Observation of carbon incorporation during gallium arsenide growth by molecular beam epitaxy

David M. Joseph, Rajappan Balagopal, Robert F. Hicks, Laurence P. Sadwick, Kang L. Wang

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

Carbon incorporation has been observed by infrared spectroscopy during the growth of a gallium arsenide film at 200°C by molecular beam epitaxy. Infrared absorbances are observed at 2925 and 2855 cm-1 with a shoulder at 2950 cm-1. These frequencies are characteristic of the symmetric and asymmetric stretches of CH3 and/or CH2 groups.

原文English
頁(從 - 到)2203-2204
頁數2
期刊Applied Physics Letters
53
發行號22
DOIs
出版狀態Published - 1988

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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