Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor

Wei Chou Wang, Hsi Jen Pan, Kong Beng Thei, Kun Wei Lin, Kuo Hui Yu, Chin Chuan Cheng, Lih Wen Laih, Shiou Ying Cheng, Wen-Chau Liu

研究成果: Article

8 引文 (Scopus)

摘要

The temperature-dependent characteristics of an InP/InGaAs superlattice-emitter resonant-tunnelling bipolar transistor have been studied and demonstrated. Due to the use of a five-period InP/InGaAs superlattice, the RT effect is observed at cryogenic temperature.In addition, the temperature-dependent dc characteristics of the studied device from room temperature to 398 K are reported. Dc current gain remains at an approximately constant value over the measured temperature range. The temperature coefficients of base-emitter and base-collector turn-on voltages are -2 and -3 mV K-1, respectively. The ideality factors of base current (nB) and collector current (nc) exhibit negative temperature coefficients. nB≈1 indicates that the bulk base recombination current component dominates the whole base current as the temperature is increased.

原文English
頁(從 - 到)935-940
頁數6
期刊Semiconductor Science and Technology
15
發行號9
DOIs
出版狀態Published - 2000 九月 1

指紋

Resonant tunneling
Heterojunction bipolar transistors
resonant tunneling
bipolar transistors
heterojunctions
accumulators
Temperature
temperature
emitters
Negative temperature coefficient
cryogenic temperature
coefficients
Bipolar transistors
Cryogenics
electric potential
room temperature
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

Wang, Wei Chou ; Pan, Hsi Jen ; Thei, Kong Beng ; Lin, Kun Wei ; Yu, Kuo Hui ; Cheng, Chin Chuan ; Laih, Lih Wen ; Cheng, Shiou Ying ; Liu, Wen-Chau. / Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor. 於: Semiconductor Science and Technology. 2000 ; 卷 15, 編號 9. 頁 935-940.
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abstract = "The temperature-dependent characteristics of an InP/InGaAs superlattice-emitter resonant-tunnelling bipolar transistor have been studied and demonstrated. Due to the use of a five-period InP/InGaAs superlattice, the RT effect is observed at cryogenic temperature.In addition, the temperature-dependent dc characteristics of the studied device from room temperature to 398 K are reported. Dc current gain remains at an approximately constant value over the measured temperature range. The temperature coefficients of base-emitter and base-collector turn-on voltages are -2 and -3 mV K-1, respectively. The ideality factors of base current (nB) and collector current (nc) exhibit negative temperature coefficients. nB≈1 indicates that the bulk base recombination current component dominates the whole base current as the temperature is increased.",
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Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor. / Wang, Wei Chou; Pan, Hsi Jen; Thei, Kong Beng; Lin, Kun Wei; Yu, Kuo Hui; Cheng, Chin Chuan; Laih, Lih Wen; Cheng, Shiou Ying; Liu, Wen-Chau.

於: Semiconductor Science and Technology, 卷 15, 編號 9, 01.09.2000, p. 935-940.

研究成果: Article

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T1 - Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor

AU - Wang, Wei Chou

AU - Pan, Hsi Jen

AU - Thei, Kong Beng

AU - Lin, Kun Wei

AU - Yu, Kuo Hui

AU - Cheng, Chin Chuan

AU - Laih, Lih Wen

AU - Cheng, Shiou Ying

AU - Liu, Wen-Chau

PY - 2000/9/1

Y1 - 2000/9/1

N2 - The temperature-dependent characteristics of an InP/InGaAs superlattice-emitter resonant-tunnelling bipolar transistor have been studied and demonstrated. Due to the use of a five-period InP/InGaAs superlattice, the RT effect is observed at cryogenic temperature.In addition, the temperature-dependent dc characteristics of the studied device from room temperature to 398 K are reported. Dc current gain remains at an approximately constant value over the measured temperature range. The temperature coefficients of base-emitter and base-collector turn-on voltages are -2 and -3 mV K-1, respectively. The ideality factors of base current (nB) and collector current (nc) exhibit negative temperature coefficients. nB≈1 indicates that the bulk base recombination current component dominates the whole base current as the temperature is increased.

AB - The temperature-dependent characteristics of an InP/InGaAs superlattice-emitter resonant-tunnelling bipolar transistor have been studied and demonstrated. Due to the use of a five-period InP/InGaAs superlattice, the RT effect is observed at cryogenic temperature.In addition, the temperature-dependent dc characteristics of the studied device from room temperature to 398 K are reported. Dc current gain remains at an approximately constant value over the measured temperature range. The temperature coefficients of base-emitter and base-collector turn-on voltages are -2 and -3 mV K-1, respectively. The ideality factors of base current (nB) and collector current (nc) exhibit negative temperature coefficients. nB≈1 indicates that the bulk base recombination current component dominates the whole base current as the temperature is increased.

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