Ohmic performance of ZnO and ITO/ZnO contacted with n-type GaN layer

Bang Tai Tang; Qing Xuan Yu; Hsin Ying Lee; Ching Ting Lee

doi:10.1016/S0921-5107(00)00760-1

Ohmic performance of ZnO and ITO/ZnO contacted with n-type GaN layer

Bang Tai Tang, Qing Xuan Yu, Hsin Ying Lee, Ching Ting Lee

光電科學與工程學系

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

The electrical characteristics of the ITO/ZnO multilayers contacts on n-GaN have been investigated. Ohmic behavior and the measured special contact resistance of 3×10^-4 Ω cm² were achieved for the ITO/ZnO/GaN structure annealed at 500°C for 5 min in hydrogen ambient. These results could be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the quantum confinement effect in a thin ZnO buffer layer.

原文	English
頁（從 - 到）	259-261
頁數	3
期刊	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
卷	82
發行號	1-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00760-1
出版狀態	Published - 2001 5月 22

All Science Journal Classification (ASJC) codes

一般材料科學
凝聚態物理學
材料力學
機械工業

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10.1016/S0921-5107(00)00760-1

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title = "Ohmic performance of ZnO and ITO/ZnO contacted with n-type GaN layer",

abstract = "The electrical characteristics of the ITO/ZnO multilayers contacts on n-GaN have been investigated. Ohmic behavior and the measured special contact resistance of 3×10-4 Ω cm2 were achieved for the ITO/ZnO/GaN structure annealed at 500°C for 5 min in hydrogen ambient. These results could be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the quantum confinement effect in a thin ZnO buffer layer.",

author = "Tang, {Bang Tai} and Yu, {Qing Xuan} and Lee, {Hsin Ying} and Lee, {Ching Ting}",

note = "Funding Information: This work was supported by the National Science Council of the Republic of China under NSC89-2215-E008-030",

year = "2001",

month = may,

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doi = "10.1016/S0921-5107(00)00760-1",

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T1 - Ohmic performance of ZnO and ITO/ZnO contacted with n-type GaN layer

AU - Tang, Bang Tai

AU - Yu, Qing Xuan

AU - Lee, Hsin Ying

AU - Lee, Ching Ting

N1 - Funding Information: This work was supported by the National Science Council of the Republic of China under NSC89-2215-E008-030

PY - 2001/5/22

Y1 - 2001/5/22

N2 - The electrical characteristics of the ITO/ZnO multilayers contacts on n-GaN have been investigated. Ohmic behavior and the measured special contact resistance of 3×10-4 Ω cm2 were achieved for the ITO/ZnO/GaN structure annealed at 500°C for 5 min in hydrogen ambient. These results could be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the quantum confinement effect in a thin ZnO buffer layer.

AB - The electrical characteristics of the ITO/ZnO multilayers contacts on n-GaN have been investigated. Ohmic behavior and the measured special contact resistance of 3×10-4 Ω cm2 were achieved for the ITO/ZnO/GaN structure annealed at 500°C for 5 min in hydrogen ambient. These results could be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the quantum confinement effect in a thin ZnO buffer layer.

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U2 - 10.1016/S0921-5107(00)00760-1

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EP - 261

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

ER -

Ohmic performance of ZnO and ITO/ZnO contacted with n-type GaN layer

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