On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment

Chun Chia Chen, Huey Ing Chen, Hao Yeh Liu, Po Cheng Chou, Jian Kai Liou, Wen Chau Liu

研究成果: Article

16 引文 (Scopus)

摘要

A GaN-based ion sensitive field-effect transistor (ISFET) prepared by a hydrogen peroxide (H2O2) treatment is fabricated and studied. A 3-nm-thick GaxOy layer formed by an immersion in H2O2 solution is examined and confirmed by EDS and XPS analyses. Experimentally, the studied pH-ISFET presents a higher voltage sensitivity (54.88 mV/pH), a higher current sensitivity (-56.09 μA/pH mm), a lower drift rate (1.41 μA/h mm), an extremely low hysteresis (0.4 mV), and a lower voltage decay rate (-0.14 mV/pH day) after 28 days. Moreover, insignificant interference effects from Na+ and K+ ions were observed. Thus, the studied GaN-based ISFET utilizing an H2O2 treatment promises to fabricate high-performance pH sensing applications.

原文English
頁(從 - 到)658-663
頁數6
期刊Sensors and Actuators, B: Chemical
209
DOIs
出版狀態Published - 2015 三月 31

指紋

Ion sensitive field effect transistors
surface treatment
hydrogen peroxide
Hydrogen peroxide
Hydrogen Peroxide
Surface treatment
field effect transistors
ions
Electric potential
Hysteresis
Energy dispersive spectroscopy
drift rate
X ray photoelectron spectroscopy
Ions
low voltage
submerging
decay rates
high current
high voltages
hysteresis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

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abstract = "A GaN-based ion sensitive field-effect transistor (ISFET) prepared by a hydrogen peroxide (H2O2) treatment is fabricated and studied. A 3-nm-thick GaxOy layer formed by an immersion in H2O2 solution is examined and confirmed by EDS and XPS analyses. Experimentally, the studied pH-ISFET presents a higher voltage sensitivity (54.88 mV/pH), a higher current sensitivity (-56.09 μA/pH mm), a lower drift rate (1.41 μA/h mm), an extremely low hysteresis (0.4 mV), and a lower voltage decay rate (-0.14 mV/pH day) after 28 days. Moreover, insignificant interference effects from Na+ and K+ ions were observed. Thus, the studied GaN-based ISFET utilizing an H2O2 treatment promises to fabricate high-performance pH sensing applications.",
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On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment. / Chen, Chun Chia; Chen, Huey Ing; Liu, Hao Yeh; Chou, Po Cheng; Liou, Jian Kai; Liu, Wen Chau.

於: Sensors and Actuators, B: Chemical, 卷 209, 31.03.2015, p. 658-663.

研究成果: Article

TY - JOUR

T1 - On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment

AU - Chen, Chun Chia

AU - Chen, Huey Ing

AU - Liu, Hao Yeh

AU - Chou, Po Cheng

AU - Liou, Jian Kai

AU - Liu, Wen Chau

PY - 2015/3/31

Y1 - 2015/3/31

N2 - A GaN-based ion sensitive field-effect transistor (ISFET) prepared by a hydrogen peroxide (H2O2) treatment is fabricated and studied. A 3-nm-thick GaxOy layer formed by an immersion in H2O2 solution is examined and confirmed by EDS and XPS analyses. Experimentally, the studied pH-ISFET presents a higher voltage sensitivity (54.88 mV/pH), a higher current sensitivity (-56.09 μA/pH mm), a lower drift rate (1.41 μA/h mm), an extremely low hysteresis (0.4 mV), and a lower voltage decay rate (-0.14 mV/pH day) after 28 days. Moreover, insignificant interference effects from Na+ and K+ ions were observed. Thus, the studied GaN-based ISFET utilizing an H2O2 treatment promises to fabricate high-performance pH sensing applications.

AB - A GaN-based ion sensitive field-effect transistor (ISFET) prepared by a hydrogen peroxide (H2O2) treatment is fabricated and studied. A 3-nm-thick GaxOy layer formed by an immersion in H2O2 solution is examined and confirmed by EDS and XPS analyses. Experimentally, the studied pH-ISFET presents a higher voltage sensitivity (54.88 mV/pH), a higher current sensitivity (-56.09 μA/pH mm), a lower drift rate (1.41 μA/h mm), an extremely low hysteresis (0.4 mV), and a lower voltage decay rate (-0.14 mV/pH day) after 28 days. Moreover, insignificant interference effects from Na+ and K+ ions were observed. Thus, the studied GaN-based ISFET utilizing an H2O2 treatment promises to fabricate high-performance pH sensing applications.

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