On a GaN-based light-emitting diode with a p-GaN/i-InGaN superlattice structure

Yi Jung Liu, Chih Hung Yen, Li Ynag Chen, Tsung Han Tsai, Tsung Yuan Tsai, Wen Chau Liu

研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)

摘要

An interesting GaN-based light-emitting diode (LED) with a ten-period i-InGaN/p-GaN (5-nm/5-nm) superlattice (SL) structure, inserted between a multiple-quantum-well structure and a p-GaN layer, is fabricated and studied. This inserted SL can be regarded as a confinement layer of holes to enhance the hole injection efficiency. As compared with a conventional LED device without the SL structure, the studied LED exhibits better current-spreading performance and an improved quality. The turn-on voltage, at 20 mA, is decreased from 3.32 to 3.14 V due to the reduced contact resistance as well as the more uniformity of carrier injection. A substantially reduced leakage current (10-7 -10-9A) and higher endurance of the reverse current pulse are found. As compared with the conventional LED without the SL structure, the significant enhancement of 25.4% in output power and the increment of 5% in external quantum efficiency are observed.

原文English
頁(從 - 到)1149-1151
頁數3
期刊IEEE Electron Device Letters
30
發行號11
DOIs
出版狀態Published - 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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