On a GaN-based light-emitting diode with an aluminum metal mirror deposited on naturally-textured V-shaped pits grown on the p-GaN surface

Jian Kai Liou; Yi Jung Liu; Chiun Chia Chen; Po Cheng Chou; Wei Chou Hsu; Wen Chau Liu

doi:10.1109/LED.2011.2177806

On a GaN-based light-emitting diode with an aluminum metal mirror deposited on naturally-textured V-shaped pits grown on the p-GaN surface

Jian Kai Liou, Yi Jung Liu, Chiun Chia Chen, Po Cheng Chou, Wei Chou Hsu, Wen Chau Liu

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

An interesting GaN-based light-emitting diode (LED) with an aluminum (Al) metal mirror deposited on naturally textured V-shaped pits (V-pits), grown on the device surface, is fabricated and studied. The V-pits is used to limit the total internal reflection as well as enhance light extraction, and the Al metal mirror is used to prevent photons from being absorbed by the Cr/Pt/Au metal pad. As compared with a conventional LED (with V-pits while without Al mirror), at 20 mA, the studied device exhibits 13.7% enhancement in light output power as well as 14% increment in external quantum efficiency. Therefore, for a LED with V-pits on top, the light extraction efficiency could be further improved by employing an Al metal mirror.

原文	English
文章編號	6125975
頁（從 - 到）	227-229
頁數	3
期刊	IEEE Electron Device Letters
卷	33
發行號	2
DOIs	https://doi.org/10.1109/LED.2011.2177806
出版狀態	Published - 2012 2月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/LED.2011.2177806

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title = "On a GaN-based light-emitting diode with an aluminum metal mirror deposited on naturally-textured V-shaped pits grown on the p-GaN surface",

abstract = "An interesting GaN-based light-emitting diode (LED) with an aluminum (Al) metal mirror deposited on naturally textured V-shaped pits (V-pits), grown on the device surface, is fabricated and studied. The V-pits is used to limit the total internal reflection as well as enhance light extraction, and the Al metal mirror is used to prevent photons from being absorbed by the Cr/Pt/Au metal pad. As compared with a conventional LED (with V-pits while without Al mirror), at 20 mA, the studied device exhibits 13.7% enhancement in light output power as well as 14% increment in external quantum efficiency. Therefore, for a LED with V-pits on top, the light extraction efficiency could be further improved by employing an Al metal mirror.",

author = "Liou, {Jian Kai} and Liu, {Yi Jung} and Chen, {Chiun Chia} and Chou, {Po Cheng} and Hsu, {Wei Chou} and Liu, {Wen Chau}",

note = "Funding Information: Manuscript received November 7, 2011; revised November 19, 2011; accepted November 21, 2011. Date of publication January 9, 2012; date of current version January 27, 2012. This work was supported in part by the National Science Council of the Republic of China under Contract NSC-100-2221-E-006-044-MY3. The review of this letter was arranged by Editor O. Manasreh.",

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AU - Liou, Jian Kai

AU - Liu, Yi Jung

AU - Chen, Chiun Chia

AU - Chou, Po Cheng

AU - Hsu, Wei Chou

AU - Liu, Wen Chau

N1 - Funding Information: Manuscript received November 7, 2011; revised November 19, 2011; accepted November 21, 2011. Date of publication January 9, 2012; date of current version January 27, 2012. This work was supported in part by the National Science Council of the Republic of China under Contract NSC-100-2221-E-006-044-MY3. The review of this letter was arranged by Editor O. Manasreh.

PY - 2012/2

Y1 - 2012/2

N2 - An interesting GaN-based light-emitting diode (LED) with an aluminum (Al) metal mirror deposited on naturally textured V-shaped pits (V-pits), grown on the device surface, is fabricated and studied. The V-pits is used to limit the total internal reflection as well as enhance light extraction, and the Al metal mirror is used to prevent photons from being absorbed by the Cr/Pt/Au metal pad. As compared with a conventional LED (with V-pits while without Al mirror), at 20 mA, the studied device exhibits 13.7% enhancement in light output power as well as 14% increment in external quantum efficiency. Therefore, for a LED with V-pits on top, the light extraction efficiency could be further improved by employing an Al metal mirror.

AB - An interesting GaN-based light-emitting diode (LED) with an aluminum (Al) metal mirror deposited on naturally textured V-shaped pits (V-pits), grown on the device surface, is fabricated and studied. The V-pits is used to limit the total internal reflection as well as enhance light extraction, and the Al metal mirror is used to prevent photons from being absorbed by the Cr/Pt/Au metal pad. As compared with a conventional LED (with V-pits while without Al mirror), at 20 mA, the studied device exhibits 13.7% enhancement in light output power as well as 14% increment in external quantum efficiency. Therefore, for a LED with V-pits on top, the light extraction efficiency could be further improved by employing an Al metal mirror.

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On a GaN-based light-emitting diode with an aluminum metal mirror deposited on naturally-textured V-shaped pits grown on the p-GaN surface

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