On an integrated gas sensing system based on an AlGaN/GaN heterostructure compound semiconductor

Chi Shiang Hsu, Kun Wei Lin, Wen-Chau Liu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

An interesting integrated gas sensing system, based on an AlGaN/GaN heterostructure compound semiconductor is developed and investigated. This gas detecting system consists of triple gas sensors and a gas sensing readout circuitry. Good gas sensing responses with remarkable current variations of 5.56 mA (@1000 ppm H2/air), 19.06 μA (@1000 ppm NH3/air), and 0.82 mA (@100 ppm NO2/air) are obtained at 200°C, respectively. The corresponding transient states are also demonstrated in this work. From the employed detecting readout system, the gas concentrations of introduced gases (H2, NH3, and NO2) could be appropriately determined and identified. In addition, a novel gray polynomial differential model (GPDM) is employed to effectively reduce redundant gas sensing data and decrease the data transmission load. From experimental results, the studied integrated gas detecting system shows advantages of multiple gas detection capability, easy operation, low cost, and high portability. Therefore, this gas sensing system shows the promise for high-performance multiple gas detecting applications.

原文English
期刊Journal of the Electrochemical Society
160
發行號9
DOIs
出版狀態Published - 2013 8月 20

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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