On enduring more data through enabling page rewrite capability on multi-level-cell flash memory

Yu Ming Chang, Chien Chung Ho, Che Wei Tsao, Shu Hsien Liao, Wei Chen Wang, Tei Wei Kuo, Yuan Hao Chang

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

The technology of NAND flash memory grows swiftly in response to the huge and rapidly changing storage market in recent years. Meanwhile, the demand for large amounts of data is also growing at an unprecedented scale. How to store more and more data over flash-based systems in a cost-effective way presents immense pressure and challenges to the system design. This motivates us to propose a breakthrough solution on the existing multi-level-cell flash memories such as TLC, being adopted in the mainstream solid-state drives. More specifically, we propose a durable management design through enabling page rewrite capability and incorporate it with the existing flash translation layer to achieve enduring more data written, even beyond the theoretical limit. Moreover, our management design further considers the adverse effect brought by disturbance, which could usually deteriorate the data correctness. The encouraging results through a series of experiments demonstrate the feasibility and the capability of our design. With the best setting we studied, the total amount of data that can be written into the system could be improved up to 2.14 times the baseline without adding any hardware cost.

原文English
主出版物標題Proceedings of the 37th ACM/SIGAPP Symposium on Applied Computing, SAC 2022
發行者Association for Computing Machinery
頁面107-115
頁數9
ISBN(電子)9781450387132
DOIs
出版狀態Published - 2022 4月 25
事件37th ACM/SIGAPP Symposium on Applied Computing, SAC 2022 - Virtual, Online
持續時間: 2022 4月 252022 4月 29

出版系列

名字Proceedings of the ACM Symposium on Applied Computing

Conference

Conference37th ACM/SIGAPP Symposium on Applied Computing, SAC 2022
城市Virtual, Online
期間22-04-2522-04-29

All Science Journal Classification (ASJC) codes

  • 軟體

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