On-resistance degradation induced by hot-carrier injection in LDMOS transistors with STI in the drift region

Jone F. Chen, Kuen Shiuan Tian, Shiang Yu Chen, Kuo Ming Wu, C. M. Liu

研究成果: Article同行評審

77 引文 斯高帕斯(Scopus)

摘要

In this letter, on-resistance (Ron) degradation induced by hot-carrier injection in n-type lateral DMOS transistors with shallow-trench isolation (STI) in the drift region is investigated. Ron decreases at the beginning of stress, but Ron increases as the stress time is increased. Experimental data and technology computer-aided-design simulation results reveal that hot-hole injection and trapping at the STI corner closest to the channel are responsible for the Ron reduction. The damage caused by hot-electron injection at the STI edge closest to the drain is responsible for the Ron increase.

原文English
頁(從 - 到)1071-1073
頁數3
期刊IEEE Electron Device Letters
29
發行號9
DOIs
出版狀態Published - 2008

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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