On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)

W. C. Liu; S. Y. Cheng; H. J. Pan; S. C. Feng; K. H. Yu; J. H. Yan

On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)

W. C. Liu, S. Y. Cheng, H. J. Pan, S. C. Feng, K. H. Yu, J. H. Yan

微電子工程研究所

研究成果: Paper › 同行評審

摘要

A new AlInAs/GaInAs superlatticed negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR is resulted mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.

原文	English
頁面	249-251
頁數	3
出版狀態	Published - 1999
事件	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust 持續時間: 1998 12月 14 → 1998 12月 16

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Other	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
城市	Perth, WA, Aust
期間	98-12-14 → 98-12-16

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電子、光磁材料

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@conference{d21426fad30e4cd093d175d5268c85ed,

title = "On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)",

abstract = "A new AlInAs/GaInAs superlatticed negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR is resulted mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.",

author = "Liu, {W. C.} and Cheng, {S. Y.} and Pan, {H. J.} and Feng, {S. C.} and Yu, {K. H.} and Yan, {J. H.}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 14-12-1998 Through 16-12-1998",

year = "1999",

language = "English",

pages = "249--251",

}

TY - CONF

T1 - On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)

AU - Liu, W. C.

AU - Cheng, S. Y.

AU - Pan, H. J.

AU - Feng, S. C.

AU - Yu, K. H.

AU - Yan, J. H.

PY - 1999

Y1 - 1999

N2 - A new AlInAs/GaInAs superlatticed negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR is resulted mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.

AB - A new AlInAs/GaInAs superlatticed negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR is resulted mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.

UR - http://www.scopus.com/inward/record.url?scp=0032641124&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032641124&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032641124

SP - 249

EP - 251

T2 - Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 14 December 1998 through 16 December 1998

ER -

On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)

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