On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)

Wen-Chau Liu, S. Y. Cheng, H. J. Pan, S. C. Feng, K. H. Yu, J. H. Yan

研究成果: Paper

摘要

A new AlInAs/GaInAs superlatticed negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR is resulted mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.

原文English
頁面249-251
頁數3
出版狀態Published - 1999 一月 1
事件Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust
持續時間: 1998 十二月 141998 十二月 16

Other

OtherProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
城市Perth, WA, Aust
期間98-12-1498-12-16

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

引用此

Liu, W-C., Cheng, S. Y., Pan, H. J., Feng, S. C., Yu, K. H., & Yan, J. H. (1999). On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT). 249-251. 論文發表於 Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth, WA, Aust, .