On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor

Po Cheng Chou, Huey Ing Chen, I. Ping Liu, Chun Chia Chen, Jian Kai Liou, Kai Siang Hsu, Wen Chau Liu

研究成果: Article同行評審

38 引文 斯高帕斯(Scopus)

摘要

An interesting ammonia gas sensor based on a p-type NiO thin film, prepared by a radio frequency sputtering process, is studied and demonstrated. As compared with conventional n-type metal-oxide sensors, the studied device shows comparable and good sensing performance, including a high-sensing response ratio of 289%, a lower response time of 31 s, and a lower recovery time of 78 s, under an introduced 1000 ppm NH3/air gas at 250 °C and 350 °C, respectively. In addition, the studied sensor device exhibits a lower detection limit (<5 ppm NH3/air) at 250 °C. Consequently, based on these advantages and inherent benefits of low cost, chemical stability, and easy fabrication, etc., the studied NiO thin-film sensor shows the promise for high-performance ammonia gas sensing applications.

原文English
文章編號7053906
頁(從 - 到)3711-3715
頁數5
期刊IEEE Sensors Journal
15
發行號7
DOIs
出版狀態Published - 2015 七月 1

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

指紋 深入研究「On the Ammonia Gas Sensing Performance of a RF Sputtered NiO Thin-Film Sensor」主題。共同形成了獨特的指紋。

引用此