On the ammonia sensing performance and transmission approach of a platinum/Nickel Oxide/GaN-Based metal-oxide-semiconductor diode

I. Ping Liu, Ching Hong Chang, Yen Ming Huang, Kun Wei Lin

研究成果: Article

1 引文 (Scopus)

摘要

New platinum (Pt)/nickel oxide (NiO)/GaN-based metal-oxide-semiconductor (MOS) diode-type ammonia sensor was fabricated and studied. In addition, a new grey polynomial differential recovery (GPDR) model was developed for the application of data transmission. The studied Pt/NiO/GaN-based MOS diode shows good ammonia sensing performance at relatively high temperatures (≥ 423 K). A very high sensing response of 244.2 under 1000 ppm NH3/air gas and a low detecting level of 2 ppm NH3/air are obtained at 423 K. The studied device also shows operating flexibility in the applied forward and reverse voltages, and good reversibility in ammonia sensing. In order to expand the practical application of ammonia sensing, a GPDR model was developed to effectively reduce data redundancy by 64.22% and achieve a recovery rate of 99.79% compared with the original data. Therefore, the studied sensor device provides promise for ammonia sensing applications.

原文English
文章編號8681536
頁(從 - 到)476-482
頁數7
期刊IEEE Journal of the Electron Devices Society
7
DOIs
出版狀態Published - 2019 一月 1

指紋

Semiconductor diodes
Semiconductors
Nickel oxide
Platinum
Ammonia
Oxides
Metals
Recovery
Air
Polynomials
Equipment and Supplies
Sensors
Data communication systems
Redundancy
Gases
Oxide semiconductors
nickel monoxide
platinum oxide
Temperature
Electric potential

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

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title = "On the ammonia sensing performance and transmission approach of a platinum/Nickel Oxide/GaN-Based metal-oxide-semiconductor diode",
abstract = "New platinum (Pt)/nickel oxide (NiO)/GaN-based metal-oxide-semiconductor (MOS) diode-type ammonia sensor was fabricated and studied. In addition, a new grey polynomial differential recovery (GPDR) model was developed for the application of data transmission. The studied Pt/NiO/GaN-based MOS diode shows good ammonia sensing performance at relatively high temperatures (≥ 423 K). A very high sensing response of 244.2 under 1000 ppm NH3/air gas and a low detecting level of 2 ppm NH3/air are obtained at 423 K. The studied device also shows operating flexibility in the applied forward and reverse voltages, and good reversibility in ammonia sensing. In order to expand the practical application of ammonia sensing, a GPDR model was developed to effectively reduce data redundancy by 64.22{\%} and achieve a recovery rate of 99.79{\%} compared with the original data. Therefore, the studied sensor device provides promise for ammonia sensing applications.",
author = "Liu, {I. Ping} and Chang, {Ching Hong} and Huang, {Yen Ming} and Lin, {Kun Wei}",
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T1 - On the ammonia sensing performance and transmission approach of a platinum/Nickel Oxide/GaN-Based metal-oxide-semiconductor diode

AU - Liu, I. Ping

AU - Chang, Ching Hong

AU - Huang, Yen Ming

AU - Lin, Kun Wei

PY - 2019/1/1

Y1 - 2019/1/1

N2 - New platinum (Pt)/nickel oxide (NiO)/GaN-based metal-oxide-semiconductor (MOS) diode-type ammonia sensor was fabricated and studied. In addition, a new grey polynomial differential recovery (GPDR) model was developed for the application of data transmission. The studied Pt/NiO/GaN-based MOS diode shows good ammonia sensing performance at relatively high temperatures (≥ 423 K). A very high sensing response of 244.2 under 1000 ppm NH3/air gas and a low detecting level of 2 ppm NH3/air are obtained at 423 K. The studied device also shows operating flexibility in the applied forward and reverse voltages, and good reversibility in ammonia sensing. In order to expand the practical application of ammonia sensing, a GPDR model was developed to effectively reduce data redundancy by 64.22% and achieve a recovery rate of 99.79% compared with the original data. Therefore, the studied sensor device provides promise for ammonia sensing applications.

AB - New platinum (Pt)/nickel oxide (NiO)/GaN-based metal-oxide-semiconductor (MOS) diode-type ammonia sensor was fabricated and studied. In addition, a new grey polynomial differential recovery (GPDR) model was developed for the application of data transmission. The studied Pt/NiO/GaN-based MOS diode shows good ammonia sensing performance at relatively high temperatures (≥ 423 K). A very high sensing response of 244.2 under 1000 ppm NH3/air gas and a low detecting level of 2 ppm NH3/air are obtained at 423 K. The studied device also shows operating flexibility in the applied forward and reverse voltages, and good reversibility in ammonia sensing. In order to expand the practical application of ammonia sensing, a GPDR model was developed to effectively reduce data redundancy by 64.22% and achieve a recovery rate of 99.79% compared with the original data. Therefore, the studied sensor device provides promise for ammonia sensing applications.

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