On the Improvement of Gate Voltage Swings in δ-Doped GaAs/InxGa1-xAs/GaAs Pseudomorphic Heterostructures

Wei Chou Hsu, Hir Ming Shieh, Ming Jer Kao, Rong Tay Hsu, Yu Huei Wu

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

Significant improvements on gate voltage swings in 5-doped GaAs/InxGa1-xAs/GaAs pseudomorphic heterostructures prepared by low-pressure metalorganic chemical vapor deposition have been demonstrated and discussed. Structure utilizing a compositionally graded InxGa1-xAs channel revealed a very flat transconductance region of 2 V. While the gate voltage swings of single and double 5-doped GaAs/In0.25Ga0.75As/GaAs structures were 2.5 and 2.8 V, respectively. All structures in this work also exhibited high extrinsic transconductances as well as high saturation current densities.

原文English
頁(從 - 到)1630-1635
頁數6
期刊IEEE Transactions on Electron Devices
40
發行號9
DOIs
出版狀態Published - 1993 九月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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