@inproceedings{426f25f1dbb74ee2a3d5e73eed2579cb,
title = "On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistor s with high-temperature reliabilities",
abstract = "We reported the high-temperature reliability characteristics of a novel InGaP/InxGa1-xAs pseudomorphic transistor with an inverted delta-doped channel in this work. Due to the presented wide-gap InGaP Schottky layer and the {"}V-shaped{"} InxGa1-xAs channel structure, the degradation of device performance with increasing the temperature is not so significant. Experimentally, for a 1×100 μm2 device, the gate-drain voltages at a gate leakage current of 260 μA/mm and the maximum transconductances gm,maxare 30 (22.2) V and 201 (169) mS/mm at the temperature of 300 K (450 K), respectively. Meanwhile, the broad and flat drain current operation regimes for high gm, fT, and fmaxare obtained.",
author = "Wen-Chau Liu and Chang, {W. L.} and Lour, {W. S.} and Yu, {K. H.} and Lin, {K. W.} and Lin, {K. P.} and Yen, {C. H.}",
year = "2000",
month = jan,
day = "1",
doi = "10.1109/ESSDERC.2000.194806",
language = "English",
isbn = "9782863322482",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "428--431",
editor = "H. Grunbacher and Crean, {Gabriel M.} and Lane, {W. A.} and McCabe, {Frank A.}",
booktitle = "ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference",
address = "United States",
note = "30th European Solid-State Device Research Conference, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",
}