On the InP/InGaAs double heterojunction bipolar transistor (DHBT) with emitter tunneling barrier and composite collector structure

J. Y. Chen, K. W. Lin, C. Y. Chen, H. M. Chuang, C. T. Kao, W. C. Liu

研究成果: Conference contribution

摘要

An InP/InGaAs double heterojunction bipolar transistor (DHBT) with an undoped emitter tunneling barrier and composite collector structure is fabricated and studied. Due to the mass filtering effect for holes, a thin in P tunneling barrier can be used to replace the wide-gap emitter. Experimentally, an appropriate tunneling barrier thickness of 150Å is employed to achieve good IV characteristics, In addition, in GaAsP compositionally step-graded layers are introduced between the p-InGaAs base and n-InP collector. By modulating the bandgap energy of InGaAsP, the large base-collector (B-C) potential spike can be divided into several small spikes with lower barrier height. The 4000Å InP collectors with InP/InGaAsP/InGaAs step-graded junction achieve high breakdown voltages of 14.6V. A small offset voltage of 80mV and a small saturation voltage of 1.8V at the collector current level of 5mA are obtained. Prior to the current gain fall-off caused by the self-heating effect, the step-graded DMBT has the current gain as high as 118 at Ic = 30mA and Vce = 3V.

原文English
主出版物標題2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
編輯Michael Gal
發行者Institute of Electrical and Electronics Engineers Inc.
頁面357-360
頁數4
ISBN(電子)0780375718
DOIs
出版狀態Published - 2002
事件Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
持續時間: 2002 十二月 112002 十二月 13

出版系列

名字Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
2002-January

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
國家/地區Australia
城市Sydney
期間02-12-1102-12-13

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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