On the nature of the silicon activation efficiency in liquid-encapsulated Czochralski-grown GaAs by photoluminescence

A. Bindal; K. L. Wang; S. J. Chang; M. A. Kallel; O. M. Stafsudd

doi:10.1063/1.343017

On the nature of the silicon activation efficiency in liquid-encapsulated Czochralski-grown GaAs by photoluminescence

A. Bindal, K. L. Wang, S. J. Chang, M. A. Kallel, O. M. Stafsudd

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12 引文斯高帕斯（Scopus）

摘要

The shallow defect evolution in Si-implanted and -annealed liquid-encapsulated Czochralski-grown GaAs is investigated by photoluminescence experiments. Three major emission lines are found. The first emission line located at 1.492 eV corresponds to the Si_Ga-C_As radiative recombination. The remaining two lines located at 1.44 and 1.40 eV are shown to correspond to Ga_I-Si_As and V_As-Si_As radiative recombinations, respectively. The effects of these three shallow centers on the silicon activation efficiency are discussed with respect to different annealing and implantation conditions.

原文	English
頁（從 - 到）	1246-1252
頁數	7
期刊	Journal of Applied Physics
卷	65
發行號	3
DOIs	https://doi.org/10.1063/1.343017
出版狀態	Published - 1989

All Science Journal Classification (ASJC) codes

一般物理與天文學

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10.1063/1.343017

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abstract = "The shallow defect evolution in Si-implanted and -annealed liquid-encapsulated Czochralski-grown GaAs is investigated by photoluminescence experiments. Three major emission lines are found. The first emission line located at 1.492 eV corresponds to the SiGa-CAs radiative recombination. The remaining two lines located at 1.44 and 1.40 eV are shown to correspond to GaI-SiAs and VAs-SiAs radiative recombinations, respectively. The effects of these three shallow centers on the silicon activation efficiency are discussed with respect to different annealing and implantation conditions.",

author = "A. Bindal and Wang, {K. L.} and Chang, {S. J.} and Kallel, {M. A.} and Stafsudd, {O. M.}",

year = "1989",

doi = "10.1063/1.343017",

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T1 - On the nature of the silicon activation efficiency in liquid-encapsulated Czochralski-grown GaAs by photoluminescence

AU - Bindal, A.

AU - Wang, K. L.

AU - Chang, S. J.

AU - Kallel, M. A.

AU - Stafsudd, O. M.

PY - 1989

Y1 - 1989

N2 - The shallow defect evolution in Si-implanted and -annealed liquid-encapsulated Czochralski-grown GaAs is investigated by photoluminescence experiments. Three major emission lines are found. The first emission line located at 1.492 eV corresponds to the SiGa-CAs radiative recombination. The remaining two lines located at 1.44 and 1.40 eV are shown to correspond to GaI-SiAs and VAs-SiAs radiative recombinations, respectively. The effects of these three shallow centers on the silicon activation efficiency are discussed with respect to different annealing and implantation conditions.

AB - The shallow defect evolution in Si-implanted and -annealed liquid-encapsulated Czochralski-grown GaAs is investigated by photoluminescence experiments. Three major emission lines are found. The first emission line located at 1.492 eV corresponds to the SiGa-CAs radiative recombination. The remaining two lines located at 1.44 and 1.40 eV are shown to correspond to GaI-SiAs and VAs-SiAs radiative recombinations, respectively. The effects of these three shallow centers on the silicon activation efficiency are discussed with respect to different annealing and implantation conditions.

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U2 - 10.1063/1.343017

DO - 10.1063/1.343017

M3 - Article

AN - SCOPUS:0038140762

SN - 0021-8979

VL - 65

SP - 1246

EP - 1252

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

On the nature of the silicon activation efficiency in liquid-encapsulated Czochralski-grown GaAs by photoluminescence

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