On the nature of the silicon activation efficiency in liquid-encapsulated Czochralski-grown GaAs by photoluminescence

A. Bindal, K. L. Wang, S. J. Chang, M. A. Kallel, O. M. Stafsudd

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11 引文 斯高帕斯(Scopus)

摘要

The shallow defect evolution in Si-implanted and -annealed liquid-encapsulated Czochralski-grown GaAs is investigated by photoluminescence experiments. Three major emission lines are found. The first emission line located at 1.492 eV corresponds to the SiGa-CAs radiative recombination. The remaining two lines located at 1.44 and 1.40 eV are shown to correspond to GaI-SiAs and VAs-SiAs radiative recombinations, respectively. The effects of these three shallow centers on the silicon activation efficiency are discussed with respect to different annealing and implantation conditions.

原文English
頁(從 - 到)1246-1252
頁數7
期刊Journal of Applied Physics
65
發行號3
DOIs
出版狀態Published - 1989

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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