The shallow defect evolution in Si-implanted and -annealed liquid-encapsulated Czochralski-grown GaAs is investigated by photoluminescence experiments. Three major emission lines are found. The first emission line located at 1.492 eV corresponds to the SiGa-CAs radiative recombination. The remaining two lines located at 1.44 and 1.40 eV are shown to correspond to GaI-SiAs and VAs-SiAs radiative recombinations, respectively. The effects of these three shallow centers on the silicon activation efficiency are discussed with respect to different annealing and implantation conditions.
All Science Journal Classification (ASJC) codes
- 物理與天文學 (全部)