On the n+-GaAs/δ(p+)-GaInP/n-GaAs high breakdown voltage field-effect transistor

Wen Lung Chang; Shiou Ying Cheng; Yung Hsin Shie; Hsi Jen Pan; Wen Shiung Lour; Wen Chau Liu

doi:10.1088/0268-1242/14/4/003

On the n⁺-GaAs/δ(p⁺)-GaInP/n-GaAs high breakdown voltage field-effect transistor

Wen Lung Chang, Shiou Ying Cheng, Yung Hsin Shie, Hsi Jen Pan, Wen Shiung Lour, Wen Chau Liu

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

A newly designed n⁺-GaAs/δ(p⁺)-GaInP/n-GaAs camel-type field-effect transistor (CAMFET) with a triple-step doped channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V and breakdown voltage of 40 V and the very low gate leakage current of 400 μA mm^-1 are obtained for the studied CAMFET. In addition, good transistor properties are obtained. The measured current gain cut-off frequency f_T and the maximum oscillation frequency f_max for a 1 μm gate device are 17 and 31 GHz, respectively. Based on experimental results, the studied device shows promise for circuit applications.

原文	English
頁（從 - 到）	307-311
頁數	5
期刊	Semiconductor Science and Technology
卷	14
發行號	4
DOIs	https://doi.org/10.1088/0268-1242/14/4/003
出版狀態	Published - 1999 4月 1

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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10.1088/0268-1242/14/4/003

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title = "On the n+-GaAs/δ(p+)-GaInP/n-GaAs high breakdown voltage field-effect transistor",

abstract = "A newly designed n+-GaAs/δ(p+)-GaInP/n-GaAs camel-type field-effect transistor (CAMFET) with a triple-step doped channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V and breakdown voltage of 40 V and the very low gate leakage current of 400 μA mm-1 are obtained for the studied CAMFET. In addition, good transistor properties are obtained. The measured current gain cut-off frequency fT and the maximum oscillation frequency fmax for a 1 μm gate device are 17 and 31 GHz, respectively. Based on experimental results, the studied device shows promise for circuit applications.",

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T1 - On the n+-GaAs/δ(p+)-GaInP/n-GaAs high breakdown voltage field-effect transistor

AU - Chang, Wen Lung

AU - Cheng, Shiou Ying

AU - Shie, Yung Hsin

AU - Pan, Hsi Jen

AU - Lour, Wen Shiung

AU - Liu, Wen Chau

PY - 1999/4/1

Y1 - 1999/4/1

N2 - A newly designed n+-GaAs/δ(p+)-GaInP/n-GaAs camel-type field-effect transistor (CAMFET) with a triple-step doped channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V and breakdown voltage of 40 V and the very low gate leakage current of 400 μA mm-1 are obtained for the studied CAMFET. In addition, good transistor properties are obtained. The measured current gain cut-off frequency fT and the maximum oscillation frequency fmax for a 1 μm gate device are 17 and 31 GHz, respectively. Based on experimental results, the studied device shows promise for circuit applications.

AB - A newly designed n+-GaAs/δ(p+)-GaInP/n-GaAs camel-type field-effect transistor (CAMFET) with a triple-step doped channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V and breakdown voltage of 40 V and the very low gate leakage current of 400 μA mm-1 are obtained for the studied CAMFET. In addition, good transistor properties are obtained. The measured current gain cut-off frequency fT and the maximum oscillation frequency fmax for a 1 μm gate device are 17 and 31 GHz, respectively. Based on experimental results, the studied device shows promise for circuit applications.

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DO - 10.1088/0268-1242/14/4/003

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

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ER -

On the n+-GaAs/δ(p+)-GaInP/n-GaAs high breakdown voltage field-effect transistor

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On the n⁺-GaAs/δ(p⁺)-GaInP/n-GaAs high breakdown voltage field-effect transistor