On the n+-GaAs/δ(p+)-GaInP/n-GaAs high breakdown voltage field-effect transistor

Wen Lung Chang, Shiou Ying Cheng, Yung Hsin Shie, Hsi Jen Pan, Wen Shiung Lour, Wen Chau Liu

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)


A newly designed n+-GaAs/δ(p+)-GaInP/n-GaAs camel-type field-effect transistor (CAMFET) with a triple-step doped channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V and breakdown voltage of 40 V and the very low gate leakage current of 400 μA mm-1 are obtained for the studied CAMFET. In addition, good transistor properties are obtained. The measured current gain cut-off frequency fT and the maximum oscillation frequency fmax for a 1 μm gate device are 17 and 31 GHz, respectively. Based on experimental results, the studied device shows promise for circuit applications.

頁(從 - 到)307-311
期刊Semiconductor Science and Technology
出版狀態Published - 1999 4月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學


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