A newly designed n+-GaAs/δ(p+)-GaInP/n-GaAs camel-type field-effect transistor (CAMFET) with a triple-step doped channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V and breakdown voltage of 40 V and the very low gate leakage current of 400 μA mm-1 are obtained for the studied CAMFET. In addition, good transistor properties are obtained. The measured current gain cut-off frequency fT and the maximum oscillation frequency fmax for a 1 μm gate device are 17 and 31 GHz, respectively. Based on experimental results, the studied device shows promise for circuit applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry