On the n+-GaAs/p+-InGaP/n--GaAs high-barrier camel-like gate transistor for high-breakdown, low-leakage and high-temperature operations

Wen-Chau Liu, K. H. Yu, H. M. Chuang, K. W. Lin, K. M. Lee, S. F. Tsai

研究成果: Conference contribution

摘要

A new field-effect transistor using an n+-GaAs/p+-InGaP/n-GaAs high-barrier camel-like gate and GaAs/InGaAs heterostructure-channel has been fabricated successfully and demonstrated. Experimentally, an ultra high gate-drain breakdown voltage of 52 V and a high drain-source operation voltage over 20 V with low leakage currents are obtained for a 1×100μm2 device. Furthermore, the studied device also shows high breakdown behaviors at high temperature environment and good microwave characteristics. Therefore, based on these good characteristics, the studied device is suitable for high-breakdown, low-leakage and high-temperature applications.

原文English
主出版物標題European Solid-State Device Research Conference
編輯Elena Gnani, Giorgio Baccarani, Massimo Rudan
發行者IEEE Computer Society
頁面215-218
頁數4
ISBN(電子)8890084782
DOIs
出版狀態Published - 2002 一月 1
事件32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy
持續時間: 2002 九月 242002 九月 26

出版系列

名字European Solid-State Device Research Conference
ISSN(列印)1930-8876

Other

Other32nd European Solid-State Device Research Conference, ESSDERC 2002
國家Italy
城市Firenze
期間02-09-2402-09-26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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