On the pseudomorphic high electron mobility transistors (PHEMTs) with a low-temperature gate approach

Li Yang Chen, Huey Ing Chen, Shiou Ying Cheng, Tzu Pin Chen, Tsung Han Tsai, Yi Jung Liu, Yi Wen Huang, Chien Chang Huang, Wen Chau Liu

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The characteristics of AlGaAs/InGaAs/GaAs depletion-mode (D-mode) and enhancement-mode (E-mode) pseudomorphic high electron mobility transistors (PHEMTs) fabricated using an electroless-plated (EP) deposition approach are investigated. Under the low-temperature and low-energy conditions, the EP deposition approach can form a better metal-semiconductor interface. For the studied devices, with 1 × 100 μ2 gate dimension, excellent characteristics of the maximum drain saturation current (168.9 mA/mm) and extrinsic transconductance (225.8 mS/mm) are obtained for the D-mode device. The corresponding values for the E-mode device are 152.5 mA/mm and 211.7 mS/ mm, respectively. Moreover, the EP approach also has the advantages of easy operation and low cost.

原文English
頁(從 - 到)325-327
頁數3
期刊IEEE Electron Device Letters
30
發行號4
DOIs
出版狀態Published - 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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