On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBT's)

Wen-Chau Liu, Jung Hui Tsai, Lih Wen Laih, Shiou Ying Cheng, Wei Chou Wang, Po Hung Lin, Jing Yuh Chen, Hao Hsiung Lin

研究成果: Paper

摘要

In this paper, we will demonstrate the effect of recombination current on the electrical properties of heterostructure-emitter bipolar transistors (HEBT's). For comparison, an AlGaAs/GaAs and an AlInAs/GaInAs HEBT are fabricated with the layer structure. For the AlGaAs/GaAs HEBT, the hole diffusion length is larger than the emitter thickness, so that most of holes can be reflected back at the confinement layer due to the hole recombination current is low in the neutral-emitter region. Thus, the high emitter injection efficiency and current gain can be achieved simultaneously. On the other hand, for the AlInAs/GaInAs HEBT, the increase of recombination current at neutral emitter regime and the existence of potential spike could reduce the emitter injection efficiency at large VBE voltage. Hence, the non-1KT component of collector current is enhanced and the characteristics of transistor are degraded. However, a lower offset voltage of 40 mV is obtained attributed to the low base surface recombination current for the AlInAs/GaInAs HEBT.

原文English
頁面243-246
頁數4
出版狀態Published - 1996 十二月 1
事件Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust
持續時間: 1996 十二月 81996 十二月 11

Other

OtherProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
城市Canberra, Aust
期間96-12-0896-12-11

指紋

Bipolar transistors
Heterojunctions
Electric potential
Transistors
Electric properties

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此文

Liu, W-C., Tsai, J. H., Laih, L. W., Cheng, S. Y., Wang, W. C., Lin, P. H., ... Lin, H. H. (1996). On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBT's). 243-246. 論文發表於 Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, .
Liu, Wen-Chau ; Tsai, Jung Hui ; Laih, Lih Wen ; Cheng, Shiou Ying ; Wang, Wei Chou ; Lin, Po Hung ; Chen, Jing Yuh ; Lin, Hao Hsiung. / On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBT's). 論文發表於 Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, .4 p.
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abstract = "In this paper, we will demonstrate the effect of recombination current on the electrical properties of heterostructure-emitter bipolar transistors (HEBT's). For comparison, an AlGaAs/GaAs and an AlInAs/GaInAs HEBT are fabricated with the layer structure. For the AlGaAs/GaAs HEBT, the hole diffusion length is larger than the emitter thickness, so that most of holes can be reflected back at the confinement layer due to the hole recombination current is low in the neutral-emitter region. Thus, the high emitter injection efficiency and current gain can be achieved simultaneously. On the other hand, for the AlInAs/GaInAs HEBT, the increase of recombination current at neutral emitter regime and the existence of potential spike could reduce the emitter injection efficiency at large VBE voltage. Hence, the non-1KT component of collector current is enhanced and the characteristics of transistor are degraded. However, a lower offset voltage of 40 mV is obtained attributed to the low base surface recombination current for the AlInAs/GaInAs HEBT.",
author = "Wen-Chau Liu and Tsai, {Jung Hui} and Laih, {Lih Wen} and Cheng, {Shiou Ying} and Wang, {Wei Chou} and Lin, {Po Hung} and Chen, {Jing Yuh} and Lin, {Hao Hsiung}",
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Liu, W-C, Tsai, JH, Laih, LW, Cheng, SY, Wang, WC, Lin, PH, Chen, JY & Lin, HH 1996, 'On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBT's)', 論文發表於 Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, 96-12-08 - 96-12-11 頁 243-246.

On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBT's). / Liu, Wen-Chau; Tsai, Jung Hui; Laih, Lih Wen; Cheng, Shiou Ying; Wang, Wei Chou; Lin, Po Hung; Chen, Jing Yuh; Lin, Hao Hsiung.

1996. 243-246 論文發表於 Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, .

研究成果: Paper

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AU - Liu, Wen-Chau

AU - Tsai, Jung Hui

AU - Laih, Lih Wen

AU - Cheng, Shiou Ying

AU - Wang, Wei Chou

AU - Lin, Po Hung

AU - Chen, Jing Yuh

AU - Lin, Hao Hsiung

PY - 1996/12/1

Y1 - 1996/12/1

N2 - In this paper, we will demonstrate the effect of recombination current on the electrical properties of heterostructure-emitter bipolar transistors (HEBT's). For comparison, an AlGaAs/GaAs and an AlInAs/GaInAs HEBT are fabricated with the layer structure. For the AlGaAs/GaAs HEBT, the hole diffusion length is larger than the emitter thickness, so that most of holes can be reflected back at the confinement layer due to the hole recombination current is low in the neutral-emitter region. Thus, the high emitter injection efficiency and current gain can be achieved simultaneously. On the other hand, for the AlInAs/GaInAs HEBT, the increase of recombination current at neutral emitter regime and the existence of potential spike could reduce the emitter injection efficiency at large VBE voltage. Hence, the non-1KT component of collector current is enhanced and the characteristics of transistor are degraded. However, a lower offset voltage of 40 mV is obtained attributed to the low base surface recombination current for the AlInAs/GaInAs HEBT.

AB - In this paper, we will demonstrate the effect of recombination current on the electrical properties of heterostructure-emitter bipolar transistors (HEBT's). For comparison, an AlGaAs/GaAs and an AlInAs/GaInAs HEBT are fabricated with the layer structure. For the AlGaAs/GaAs HEBT, the hole diffusion length is larger than the emitter thickness, so that most of holes can be reflected back at the confinement layer due to the hole recombination current is low in the neutral-emitter region. Thus, the high emitter injection efficiency and current gain can be achieved simultaneously. On the other hand, for the AlInAs/GaInAs HEBT, the increase of recombination current at neutral emitter regime and the existence of potential spike could reduce the emitter injection efficiency at large VBE voltage. Hence, the non-1KT component of collector current is enhanced and the characteristics of transistor are degraded. However, a lower offset voltage of 40 mV is obtained attributed to the low base surface recombination current for the AlInAs/GaInAs HEBT.

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Liu W-C, Tsai JH, Laih LW, Cheng SY, Wang WC, Lin PH 等. On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBT's). 1996. 論文發表於 Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, .