The temperature-dependent electron impact ionizations of an InPInGaAs double heterojunction bipolar transistor (DHBT) with a step-graded InAlGaAsInP collector structure are studied and demonstrated from 300 to 400 K. Experimentally, the multiplication factor and electron ionization coefficient are increased with increasing temperature. Furthermore, the studied device shows a lower multiplication factor and weaker temperature dependence as compared with conventional InPInGaAs HBTs. Therefore, the studied DHBT device with a step-graded InAlGaAsInP collector structure provides promise for low-voltage and low-power circuit applications.
All Science Journal Classification (ASJC) codes
- 化學工程 (全部)