On the temperature-dependent electron impact ionizations in a step-graded InAlGaAsInP collector double heterojunction bipolar Transistor

Tzu Pin Chen, Ching Wen Hung, Kuei Yi Chu, Li Yang Chen, Tsung Han Tsai, Shiou Ying Cheng, Wen-Chau Liu

研究成果: Article同行評審

摘要

The temperature-dependent electron impact ionizations of an InPInGaAs double heterojunction bipolar transistor (DHBT) with a step-graded InAlGaAsInP collector structure are studied and demonstrated from 300 to 400 K. Experimentally, the multiplication factor and electron ionization coefficient are increased with increasing temperature. Furthermore, the studied device shows a lower multiplication factor and weaker temperature dependence as compared with conventional InPInGaAs HBTs. Therefore, the studied DHBT device with a step-graded InAlGaAsInP collector structure provides promise for low-voltage and low-power circuit applications.

原文English
期刊Electrochemical and Solid-State Letters
10
發行號12
DOIs
出版狀態Published - 2007 十月 22

All Science Journal Classification (ASJC) codes

  • 化學工程 (全部)
  • 材料科學(全部)
  • 物理與理論化學
  • 電化學
  • 電氣與電子工程

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