On the thermal annealing conditions for self-synthesis of tungsten carbide nanowires from WCx films

Shui Jinn Wang, Chao Hsuing Chen, Shu Cheng Chang, Chin Hong Wong, Kai Ming Uang, Tron Min Chen, Rong Ming Ko, Bor Wien Liou

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

The thermal annealing conditions in nitrogen ambient for the self-synthesis of tungsten carbide nanowires from sputter-deposited WCx films were investigated. Experimental results show that the temperature window for the growth of nanowires lies in the range of 500-750°C with the corresponding annealing time interval ranging from 2.5 to 0.25 h. The diameter, length, and density of the grown nanowires are in the range of 10-15 nm, 0.1-0.3 μm, and 210-410 μm-2, respectively. The degree of carbon depletion in the annealed WCx films plays a crucial role in determining both the shape and density of the self-synthesized nanowires. Nanowires synthesized at lower temperatures were seen to be smaller in dimension but higher in density. Material analysis reveals that the phase transition from WC to W2C arising from decarburization of the WCx film during thermal annealing should be responsible for the self-synthesis of nanowires.

原文English
頁(從 - 到)273-277
頁數5
期刊Nanotechnology
16
發行號2
DOIs
出版狀態Published - 2005 二月 1

All Science Journal Classification (ASJC) codes

  • 生物工程
  • 化學 (全部)
  • 材料科學(全部)
  • 材料力學
  • 機械工業
  • 電氣與電子工程

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