One-dimensional transport in quantum well wire-high electron mobility transistor

Perng Fei Yuh, K. L. Wang

研究成果: Article同行評審

26 引文 斯高帕斯(Scopus)

摘要

A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electron gas FET. The FET structure, device operation, and the low-field mobility of impurity scattering, which takes the screening effect into account, are discussed.

原文English
頁(從 - 到)1738-1740
頁數3
期刊Applied Physics Letters
49
發行號25
DOIs
出版狀態Published - 1986

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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