One-dimensional transport of In 2O 3 nanowires

Fei Liu, Mingqiang Bao, Kang L. Wang, Chao Li, Bo Lei, Chongwu Zhou

研究成果: Article同行評審

47 引文 斯高帕斯(Scopus)

摘要

The gate-dependent one-dimensional transport of single-crystal In2 O3 nanowire field effect transistors is studied at low temperature by measuring current (I-V) and differential conductance (d Ids d Vds). At a smaller positive gate bias, gaps at near-zero source-drain bias were observed for both current and differential conductance spectra due to the absence of the density of states in the source-drain energy window for a small Vds. The transport can be explained using conventional low-temperature field effect transistor theory. On the other hand, at a large gate bias when the Fermi energy of the nanowire moves up into its conduction band, the differential conductance of the semiconducting In2 O3 nanowire exhibits zero-bias anomalies, following a power-law behavior.

原文English
文章編號213101
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
86
發行號21
DOIs
出版狀態Published - 2005 五月 23

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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