摘要
The gate-dependent one-dimensional transport of single-crystal In2 O3 nanowire field effect transistors is studied at low temperature by measuring current (I-V) and differential conductance (d Ids d Vds). At a smaller positive gate bias, gaps at near-zero source-drain bias were observed for both current and differential conductance spectra due to the absence of the density of states in the source-drain energy window for a small Vds. The transport can be explained using conventional low-temperature field effect transistor theory. On the other hand, at a large gate bias when the Fermi energy of the nanowire moves up into its conduction band, the differential conductance of the semiconducting In2 O3 nanowire exhibits zero-bias anomalies, following a power-law behavior.
原文 | English |
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文章編號 | 213101 |
頁(從 - 到) | 1-3 |
頁數 | 3 |
期刊 | Applied Physics Letters |
卷 | 86 |
發行號 | 21 |
DOIs | |
出版狀態 | Published - 2005 5月 23 |
All Science Journal Classification (ASJC) codes
- 物理與天文學(雜項)