Operation of multi-level phase change memory using various programming techniques

Jun Tin Lin; Yi Bo Liao; Meng Hsueh Chiang; Wei Chou Hsu

doi:10.1109/ICICDT.2009.5166295

Operation of multi-level phase change memory using various programming techniques

Jun Tin Lin, Yi Bo Liao, Meng Hsueh Chiang, Wei Chou Hsu

研究成果: Conference contribution

14 引文斯高帕斯（Scopus）

摘要

In this paper, we evaluate the writing operation of multi-level phase change memory by using different programming techniques including proposed monotonically increasing and decreasing pulse, constant pulse, and slow quenching schemes. Our simulation results suggest that the proposed multi-level cell schemes not only have an advantage in density but also consume less power during writing operation.

原文	English
主出版物標題	2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009
頁面	199-202
頁數	4
DOIs	https://doi.org/10.1109/ICICDT.2009.5166295
出版狀態	Published - 2009
事件	2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009 - Austin, TX, United States 持續時間: 2009 5月 18 → 2009 5月 20

出版系列

名字	2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009

Other

Other	2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009
國家/地區	United States
城市	Austin, TX
期間	09-05-18 → 09-05-20

All Science Journal Classification (ASJC) codes

硬體和架構
電氣與電子工程

存取文件

10.1109/ICICDT.2009.5166295

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引用此

Lin, J. T., Liao, Y. B., Chiang, M. H., & Hsu, W. C. (2009). Operation of multi-level phase change memory using various programming techniques. 於 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009 (頁 199-202). 文章 5166295 (2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009). https://doi.org/10.1109/ICICDT.2009.5166295

@inproceedings{6de3c52772c34bd499aed9a13268ed42,

title = "Operation of multi-level phase change memory using various programming techniques",

abstract = "In this paper, we evaluate the writing operation of multi-level phase change memory by using different programming techniques including proposed monotonically increasing and decreasing pulse, constant pulse, and slow quenching schemes. Our simulation results suggest that the proposed multi-level cell schemes not only have an advantage in density but also consume less power during writing operation.",

author = "Lin, {Jun Tin} and Liao, {Yi Bo} and Chiang, {Meng Hsueh} and Hsu, {Wei Chou}",

year = "2009",

doi = "10.1109/ICICDT.2009.5166295",

language = "English",

isbn = "9781424429332",

series = "2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009",

pages = "199--202",

booktitle = "2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009",

note = "2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009 ; Conference date: 18-05-2009 Through 20-05-2009",

}

Lin, JT, Liao, YB, Chiang, MH & Hsu, WC 2009, Operation of multi-level phase change memory using various programming techniques. 於 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009., 5166295, 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009, 頁 199-202, 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009, Austin, TX, United States, 09-05-18. https://doi.org/10.1109/ICICDT.2009.5166295

Operation of multi-level phase change memory using various programming techniques. / Lin, Jun Tin; Liao, Yi Bo; Chiang, Meng Hsueh 等.
2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009. 2009. p. 199-202 5166295 (2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009).

研究成果: Conference contribution

TY - GEN

T1 - Operation of multi-level phase change memory using various programming techniques

AU - Lin, Jun Tin

AU - Liao, Yi Bo

AU - Chiang, Meng Hsueh

AU - Hsu, Wei Chou

PY - 2009

Y1 - 2009

N2 - In this paper, we evaluate the writing operation of multi-level phase change memory by using different programming techniques including proposed monotonically increasing and decreasing pulse, constant pulse, and slow quenching schemes. Our simulation results suggest that the proposed multi-level cell schemes not only have an advantage in density but also consume less power during writing operation.

AB - In this paper, we evaluate the writing operation of multi-level phase change memory by using different programming techniques including proposed monotonically increasing and decreasing pulse, constant pulse, and slow quenching schemes. Our simulation results suggest that the proposed multi-level cell schemes not only have an advantage in density but also consume less power during writing operation.

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U2 - 10.1109/ICICDT.2009.5166295

DO - 10.1109/ICICDT.2009.5166295

M3 - Conference contribution

AN - SCOPUS:77949612899

SN - 9781424429332

T3 - 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009

SP - 199

EP - 202

BT - 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009

T2 - 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009

Y2 - 18 May 2009 through 20 May 2009

ER -

Lin JT, Liao YB, Chiang MH , Hsu WC. Operation of multi-level phase change memory using various programming techniques. 於 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009. 2009. p. 199-202. 5166295. (2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009). doi: 10.1109/ICICDT.2009.5166295

Operation of multi-level phase change memory using various programming techniques

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出版系列

Other

All Science Journal Classification (ASJC) codes

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其它文件與鏈接

指紋

引用此