Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor

Chen Chuan Yang, Wan Ju Tung, Sheng Po Chang, Ming Hung Hsu, Wei Lun Huang, Cheng Hsun Li, Yu Jui Fang, Shoou Jinn Chang

研究成果: Conference contribution

1 引文 (Scopus)

摘要

We investigated the optical and electrical properties of the zinc tin oxide (ZTO) thin-film phototransistors. The device has a threshold voltage of 0.48 V, field effect mobility of 1.47 cm 2 /Vs in the saturation region, on/off drain current ratio of 2×10 6 , and subthreshold swing of 0.45 V/decade under dark environment. As an UV photodetector, the device has a responsivity of 0.329 A/W and a rejection ratio of 3.19×10 4 at a gate voltage of -15 V under illumination of wavelength 300 nm.

原文English
主出版物標題Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-2
頁數2
ISBN(電子)9781538614457
DOIs
出版狀態Published - 2018 六月 22
事件7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
持續時間: 2018 五月 72018 五月 9

出版系列

名字Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Other

Other7th International Symposium on Next-Generation Electronics, ISNE 2018
國家Taiwan
城市Taipei
期間18-05-0718-05-09

指紋

Phototransistors
phototransistors
Drain current
Photodetectors
Zinc oxide
Tin oxides
Threshold voltage
zinc oxides
tin oxides
Oxide films
Electric properties
Optical properties
Lighting
electrical properties
Thin films
Wavelength
Electric potential
thin films
rejection
threshold voltage

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

引用此文

Yang, C. C., Tung, W. J., Chang, S. P., Hsu, M. H., Huang, W. L., Li, C. H., ... Chang, S. J. (2018). Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor. 於 Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018 (頁 1-2). (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2018.8394646
Yang, Chen Chuan ; Tung, Wan Ju ; Chang, Sheng Po ; Hsu, Ming Hung ; Huang, Wei Lun ; Li, Cheng Hsun ; Fang, Yu Jui ; Chang, Shoou Jinn. / Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor. Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 頁 1-2 (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).
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abstract = "We investigated the optical and electrical properties of the zinc tin oxide (ZTO) thin-film phototransistors. The device has a threshold voltage of 0.48 V, field effect mobility of 1.47 cm 2 /Vs in the saturation region, on/off drain current ratio of 2×10 6 , and subthreshold swing of 0.45 V/decade under dark environment. As an UV photodetector, the device has a responsivity of 0.329 A/W and a rejection ratio of 3.19×10 4 at a gate voltage of -15 V under illumination of wavelength 300 nm.",
author = "Yang, {Chen Chuan} and Tung, {Wan Ju} and Chang, {Sheng Po} and Hsu, {Ming Hung} and Huang, {Wei Lun} and Li, {Cheng Hsun} and Fang, {Yu Jui} and Chang, {Shoou Jinn}",
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Yang, CC, Tung, WJ, Chang, SP, Hsu, MH, Huang, WL, Li, CH, Fang, YJ & Chang, SJ 2018, Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor. 於 Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018, Institute of Electrical and Electronics Engineers Inc., 頁 1-2, 7th International Symposium on Next-Generation Electronics, ISNE 2018, Taipei, Taiwan, 18-05-07. https://doi.org/10.1109/ISNE.2018.8394646

Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor. / Yang, Chen Chuan; Tung, Wan Ju; Chang, Sheng Po; Hsu, Ming Hung; Huang, Wei Lun; Li, Cheng Hsun; Fang, Yu Jui; Chang, Shoou Jinn.

Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2 (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).

研究成果: Conference contribution

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AU - Yang, Chen Chuan

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AB - We investigated the optical and electrical properties of the zinc tin oxide (ZTO) thin-film phototransistors. The device has a threshold voltage of 0.48 V, field effect mobility of 1.47 cm 2 /Vs in the saturation region, on/off drain current ratio of 2×10 6 , and subthreshold swing of 0.45 V/decade under dark environment. As an UV photodetector, the device has a responsivity of 0.329 A/W and a rejection ratio of 3.19×10 4 at a gate voltage of -15 V under illumination of wavelength 300 nm.

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Yang CC, Tung WJ, Chang SP, Hsu MH, Huang WL, Li CH 等. Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor. 於 Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-2. (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). https://doi.org/10.1109/ISNE.2018.8394646