Optical and photo-electrical properties of zinc tin oxide thin-film phototransistor

Chen Chuan Yang, Wan Ju Tung, Sheng Po Chang, Ming Hung Hsu, Wei Lun Huang, Cheng Hsun Li, Yu Jui Fang, Shoou Jinn Chang

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

We investigated the optical and electrical properties of the zinc tin oxide (ZTO) thin-film phototransistors. The device has a threshold voltage of 0.48 V, field effect mobility of 1.47 cm2/Vs in the saturation region, on/off drain current ratio of 2×106, and subthreshold swing of 0.45 V/decade under dark environment. As an UV photodetector, the device has a responsivity of 0.329 A/W and a rejection ratio of 3.19×104 at a gate voltage of -15 V under illumination of wavelength 300 nm.

原文English
主出版物標題Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-2
頁數2
ISBN(電子)9781538614457
DOIs
出版狀態Published - 2018 6月 22
事件7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
持續時間: 2018 5月 72018 5月 9

出版系列

名字Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Other

Other7th International Symposium on Next-Generation Electronics, ISNE 2018
國家/地區Taiwan
城市Taipei
期間18-05-0718-05-09

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料
  • 儀器

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