Optical and structural studies of relaxation in SI1-xGEx SI strained-layer superlattices

S. M. Prokes, O. J. Glembocki, K. L. Wang

研究成果: Article同行評審

摘要

Asymmetrically and symmetrically strained Si SiGe superlattices were grown on Si(001) by Molecular Beam Epitaxy (MBE) and studied as a function of thermal treatments. X-ray diffraction was used to monitor the extent of interdiffusion with annealing time and temperature and results indicate that initially the interdiffusion is very rapid and non-linear, but later a steady-state regime is attained. Raman spectroscopy has shown that in the very early heating stages, strain relaxation occurs predominantly by interdiffusion, and Ge diffusion can be enhanced by strain. The results also indicate that a significant contribution to the interdiffusion occurs by an interstitial-type mechanism.

原文English
頁(從 - 到)113-118
頁數6
期刊Superlattices and Microstructures
10
發行號1
DOIs
出版狀態Published - 1991

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 電氣與電子工程

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