Optical characteristics of two-dimensional electrons in single and multiple AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition

Sun Mo Kim, Ho Sang Kwack, Sun Woong Hwang, Yong Hoon Cho, H. I. Cho, J. H. Lee, Kang L. Wang

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The optical properties of two-dimensional electron gas (2DEG) in single and multiple AlxGa1-xN/GaN heterostructures were investigated by means of photoluminescence (PL), temperature dependent PL, power dependent PL. A strong GaN band edge emission and its longitudinal optical (LO) phonon replicas were observed for all the samples. The PL peaks related to recombination between the 2DEG and photogenerated hole are observed at ∼ 3.45 eV for single AlxGa1-xN/GaN heterostructures and at ∼ 3.425 and ø 3.45 eV for multiple AlxGa 1-xN/GaN heterostructures. The LO phonon replicas of the 2DEG emission were also clearly observed. The 2DEG-related emission intensity decreased with increasing temperature and disappeared at temperatures above 150 K. A possible origin of the appearance of 2DEG-related emissions in single and multiple AlGaN/GaN heterostructures has been discussed.

原文English
頁(從 - 到)2113-2116
頁數4
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
3
DOIs
出版狀態Published - 2006
事件6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
持續時間: 2005 八月 282005 九月 2

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學

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