Optical characterization of InGaN/GaN multiple quantum well structures grown by metalorganic chemical vapor deposition

Yan Kuin Su, An Ting Cheng, Wei Chi Lai

研究成果: Conference article

摘要

Optical and crystal properties of InGaN/GaN multiple quantum well (MQW) structures grown by metalorganic chemical vapor deposition (MOCVD) were characterized using room-temperature photoluminescence (PL) and high-resolution X-ray diffraction (HRXRD), respectively. The near bandgap excitonic peak decreased from 2.77 eV to 2.68 eV while there was a 10 Â increase in the well thickness, probably caused by variations of quantized energy levels. In addition, higher growth temperature of MQW structures had a small influence on the pair thickness, but the emission wavelength showed a blueshift attributed to the decrease in average of indium mole fraction. However, the near bandgap excitonic peak remained constant for the thicker quantum barriers. For the PL emission intensity of InGaN/GaN MQW structures, it was enhanced with a thinner quantum well width and a thicker quantum barrier, which could be resulted from the improvement of optical confinement in the quantum well. Moreover, by using the higher growth temperature, enhanced PL intensity was achieved due to the improvement of structure quality for the InGaN/GaN heterostructure. Therefore, these results suggest that the emission wavelength and intensity of the InGaN/GaN MQW-based optical device could be modulated by designing thicknesses of quantum wells as well as growth temperatures of MQW structures.

原文English
文章編號658311
期刊Proceedings of SPIE - The International Society for Optical Engineering
6583
DOIs
出版狀態Published - 2007 十一月 19
事件Photon Counting Applications, Quantum Optics, and Quantum Cryptography - Prague, Czech Republic
持續時間: 2007 四月 182007 四月 19

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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