Optical phonons in self-assembled Ge quantum dot superlattices: Strain relaxation effects

J. L. Liu; J. Wan; Z. M. Jiang; A. Khitun; K. L. Wang; D. P. Yu

doi:10.1063/1.1518756

Optical phonons in self-assembled Ge quantum dot superlattices: Strain relaxation effects

J. L. Liu, J. Wan, Z. M. Jiang, A. Khitun, K. L. Wang, D. P. Yu

電機資訊學院

研究成果: Article › 同行評審

41 引文斯高帕斯（Scopus）

摘要

Raman scattering by optical phonons was studied in self-assembled Ge quantum dot superlattices. It was found that the GeGe optical phonon frequency was mainly caused by strain relaxation effects. The comparison of experimental and calculated results indicated that the strain relaxation of Ge quantum dot superlattices was not only due to atomic intermixing but also from the morphology transition in dot formation.

原文	English
頁（從 - 到）	6804-6808
頁數	5
期刊	Journal of Applied Physics
卷	92
發行號	11
DOIs	https://doi.org/10.1063/1.1518756
出版狀態	Published - 2002 12月 1

All Science Journal Classification (ASJC) codes

物理與天文學 (全部)

存取文件

10.1063/1.1518756

其它文件與鏈接

引用此

@article{d9d0c91f0e634b2891708bc7596b4eb7,

title = "Optical phonons in self-assembled Ge quantum dot superlattices: Strain relaxation effects",

abstract = "Raman scattering by optical phonons was studied in self-assembled Ge quantum dot superlattices. It was found that the GeGe optical phonon frequency was mainly caused by strain relaxation effects. The comparison of experimental and calculated results indicated that the strain relaxation of Ge quantum dot superlattices was not only due to atomic intermixing but also from the morphology transition in dot formation.",

author = "Liu, {J. L.} and J. Wan and Jiang, {Z. M.} and A. Khitun and Wang, {K. L.} and Yu, {D. P.}",

year = "2002",

month = dec,

day = "1",

doi = "10.1063/1.1518756",

language = "English",

volume = "92",

pages = "6804--6808",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Optical phonons in self-assembled Ge quantum dot superlattices

T2 - Strain relaxation effects

AU - Liu, J. L.

AU - Wan, J.

AU - Jiang, Z. M.

AU - Khitun, A.

AU - Wang, K. L.

AU - Yu, D. P.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - Raman scattering by optical phonons was studied in self-assembled Ge quantum dot superlattices. It was found that the GeGe optical phonon frequency was mainly caused by strain relaxation effects. The comparison of experimental and calculated results indicated that the strain relaxation of Ge quantum dot superlattices was not only due to atomic intermixing but also from the morphology transition in dot formation.

AB - Raman scattering by optical phonons was studied in self-assembled Ge quantum dot superlattices. It was found that the GeGe optical phonon frequency was mainly caused by strain relaxation effects. The comparison of experimental and calculated results indicated that the strain relaxation of Ge quantum dot superlattices was not only due to atomic intermixing but also from the morphology transition in dot formation.

UR - http://www.scopus.com/inward/record.url?scp=0036904033&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036904033&partnerID=8YFLogxK

U2 - 10.1063/1.1518756

DO - 10.1063/1.1518756

M3 - Article

AN - SCOPUS:0036904033

SN - 0021-8979

VL - 92

SP - 6804

EP - 6808

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Optical phonons in self-assembled Ge quantum dot superlattices: Strain relaxation effects

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此