Optical properties of InGaN/GaN nanorods fabricated by inductively coupled plasma etching

T. H. Hsueh, J. K. Sheu, Y. H. Chang, H. C. Kuo, S. C. Wang

研究成果: Conference contribution

摘要

The fabrication of In0.3Ga0.7N/GaN multiple quantum wells nanorods with diameters of 60-100 nm and their optical characteristics performed by micron photo-luminescence measurements are presented. The photoluminescence (PL) spectra with sharp linewidths of typically 1.5 nm were observed at 4K. The excitation power dependent spectra show that no energy shift was observed for these sharp peaks. Increasing the excitation power instead leads to an occurrence of new, sharp PL peaks at the higher energy tail of the PL spectra, which suggest that excitons are strongly confined in quantum dots-like region or localization centers.

原文English
主出版物標題2005 5th IEEE Conference on Nanotechnology
發行者IEEE Computer Society
頁面320-323
頁數4
ISBN(列印)0780391993, 9780780391994
DOIs
出版狀態Published - 2005
事件2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
持續時間: 2005 七月 112005 七月 15

出版系列

名字2005 5th IEEE Conference on Nanotechnology
1

Other

Other2005 5th IEEE Conference on Nanotechnology
國家Japan
城市Nagoya
期間05-07-1105-07-15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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