Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor

Ching Sung Lee, Bo Yi Chou, Wei-Chou Hsu, Sheng-Yuan Chu, Der Yu Lin, Chiu Sheng Ho, Yin Lai Lai, Shen Han Yang, Wei Ting Chien

研究成果: Conference contribution

摘要

A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.

原文English
主出版物標題2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings
DOIs
出版狀態Published - 2010 七月 30
事件International Symposium on Photonics and Optoelectronics, SOPO 2010 - Chengdu, China
持續時間: 2010 六月 192010 六月 21

出版系列

名字2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings

Other

OtherInternational Symposium on Photonics and Optoelectronics, SOPO 2010
國家China
城市Chengdu
期間10-06-1910-06-21

指紋

Zinc Oxide
High electron mobility transistors
Zinc oxide
Aluminum
Optical sensors
Lighting
Wavelength
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

引用此文

Lee, C. S., Chou, B. Y., Hsu, W-C., Chu, S-Y., Lin, D. Y., Ho, C. S., ... Chien, W. T. (2010). Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor. 於 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings [5504370] (2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings). https://doi.org/10.1109/SOPO.2010.5504370
Lee, Ching Sung ; Chou, Bo Yi ; Hsu, Wei-Chou ; Chu, Sheng-Yuan ; Lin, Der Yu ; Ho, Chiu Sheng ; Lai, Yin Lai ; Yang, Shen Han ; Chien, Wei Ting. / Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor. 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings. 2010. (2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings).
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title = "Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor",
abstract = "A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.",
author = "Lee, {Ching Sung} and Chou, {Bo Yi} and Wei-Chou Hsu and Sheng-Yuan Chu and Lin, {Der Yu} and Ho, {Chiu Sheng} and Lai, {Yin Lai} and Yang, {Shen Han} and Chien, {Wei Ting}",
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Lee, CS, Chou, BY, Hsu, W-C, Chu, S-Y, Lin, DY, Ho, CS, Lai, YL, Yang, SH & Chien, WT 2010, Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor. 於 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings., 5504370, 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings, International Symposium on Photonics and Optoelectronics, SOPO 2010, Chengdu, China, 10-06-19. https://doi.org/10.1109/SOPO.2010.5504370

Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor. / Lee, Ching Sung; Chou, Bo Yi; Hsu, Wei-Chou; Chu, Sheng-Yuan; Lin, Der Yu; Ho, Chiu Sheng; Lai, Yin Lai; Yang, Shen Han; Chien, Wei Ting.

2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings. 2010. 5504370 (2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings).

研究成果: Conference contribution

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AU - Lee, Ching Sung

AU - Chou, Bo Yi

AU - Hsu, Wei-Chou

AU - Chu, Sheng-Yuan

AU - Lin, Der Yu

AU - Ho, Chiu Sheng

AU - Lai, Yin Lai

AU - Yang, Shen Han

AU - Chien, Wei Ting

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N2 - A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.

AB - A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.

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Lee CS, Chou BY, Hsu W-C, Chu S-Y, Lin DY, Ho CS 等. Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor. 於 2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings. 2010. 5504370. (2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings). https://doi.org/10.1109/SOPO.2010.5504370