Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor

Ching Sung Lee, Bo Yi Chou, Wei-Chou Hsu, Sheng-Yuan Chu, Der Yu Lin, Chiu Sheng Ho, Yin Lai Lai, Shen Han Yang, Wei Ting Chien

研究成果: Conference contribution

摘要

A three-terminal optical sensor by using an aluminum-doped zinc oxide (AZO)-gated Al0.2Ga0.8As /In0.2Ga 0.8As high electron mobility transistor (AZO-HEMT) on a GaAs substrate is demonstrated in this report. Optical responses under illumination of different wavelengths are investigated, as compared to a conventional Au-gated HEMT device. Experimental results demonstrate that the present design is promising for tunable optical sensing applications.

原文English
主出版物標題2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings
DOIs
出版狀態Published - 2010 7月 30
事件International Symposium on Photonics and Optoelectronics, SOPO 2010 - Chengdu, China
持續時間: 2010 6月 192010 6月 21

出版系列

名字2010 Symposium on Photonics and Optoelectronic, SOPO 2010 - Proceedings

Other

OtherInternational Symposium on Photonics and Optoelectronics, SOPO 2010
國家/地區China
城市Chengdu
期間10-06-1910-06-21

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

指紋

深入研究「Optical sensing characteristics in a transparent Al-doped zinc oxide-gated Al0.2Ga0.8As/In0.2Ga0.8As high electron mobility transistor」主題。共同形成了獨特的指紋。

引用此